TVS Diode Arrays (SPA Diodes) Datasheet AQ1250-01ETG, 50A Discrete Unidirectional TVS Diode Uidirectional Discrete TVS Diode, General Purpose Surge Protection RoHS Pb GREEN Description The AQ1250-01ETG unidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The AQ1250 TVS can safely absorb repetitive ESD strikes of 30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, each TVS can safely dissipate a 50A 8/20s surge event as defined in IEC nd 61000-4-5 2 edition. Note: This package image is for example and reference only. for detail package drawing, Features please refer to the package section in this datasheet. ESD, IEC 61000-4-2, 30kV Low leakage current of contact, 30kV air 0.02A (TYP) at 5V EFT, IEC 61000-4-4, 40A Halogen free, lead free and Pinout (5/50ns) RoHS compliant 0201 Flipchip Lightning, 50A (8/20s as Moisture Sensitivity Level nd defined in IEC 61000-4-5 2 AECQ-101 qualified and PPAP 12 edition) capable ESD, ISO 10605, 330pF 330, 30kV contact, 30kV air Functional Block Diagram Applications Switches / Buttons Notebooks / Desktops / 2 1 Servers Test Equipment / Instrumentation Computer Peripherals Point-of-Sale Terminals Battery Medical Equipment Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/27/21 TVS Diode Arrays (SPA Diodes) Datasheet AQ1250-01ETG, 50A Discrete Unidirectional TVS Diode Uidirectional Discrete TVS Diode, General Purpose Surge Protection Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 50 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5 V RWM R Breakdown Voltage V I =1mA 5.2 5.5 V BR R Reverse Leakage Current I V =5V 0.02 0.1 A LEAK R 1 Clamp Voltage V I =50A, t =8/20s 8.7 10 V C PP p 2 Dynamic Resistance R TLP, t =100ns 0.05 DYN P IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 118 pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs Reverse Bias Clamping Voltage vs I PP 120.0 12.0 11.0 100.0 10.0 9.0 80.0 8.0 7.0 60.0 6.0 5.0 40.0 4.0 3.0 20.0 2.0 1.0 0.0 0.0 15 20 25 30 35 40 45 50 01234 5 - Bias Voltage (V) Peak Pulse Current I (A) PP 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/27/21 Capacitance (pF) Clamp Voltage (V ) C