TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - AQ3045 Series RoHS Pb GREEN AQ3045 Series 0.35pF 30kV Bidirectional Discrete TVS Description The AQ3045 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in IEC 61000-4-2 international standard (30kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Pinout Features ESD protection of 30kV Low leakage current of contact discharge, 100nA at 5.3V (MAX) SOD882 30kV air discharge, (IEC Small SOD882 packaging 61000-4-2) helps save board space EFT, IEC 61000-4-4, 40A Extremely low dynamic 1 2 (5/50ns) resistance (0.55 TYP) Lightning, 3A (8/20s as AEC-Q101 qualified defined in IEC 61000-4-5 (AEC-Q101 qualified) Halogen free, lead free and nd 2 edition) RoHS compliant Low capacitance of Moisture Sensitivity 0.35pF V =0V (TYP) R Level(MSL -1) PPAP capable Functional Block Diagram Applications USB 3.0/USB 2.0/MHL External Storage MIPI Camera and Display Ultrabooks, Notebooks HDMI 2.0, DisplayPort Tablets, eReaders 1.3, eSATA High Speed Serial Set Top Boxes, Game Interfaces 2 Consoles 1 Automotive applications Smart Phones Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/28/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - AQ3045 Series Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 40 W PK P I Peak Current (t =8/20s) 3.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1uA - - 5.3 V RWM R Breakdown Voltage V I =1mA 6.8 7.8 9.0 V BR R Reverse Leakage Current I V =5.3V - <10 100 nA LEAK R 1 Clamp Voltage V I =1A, t =8/20s, Fwd - - 12.0 V C PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.55 - DYN p IEC 61000-4-2 (Contact) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz - 0.35 0.5 pF I/O-I/O Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Transmission Line Pulsing(TLP) Plot 35 110% 100% 30 90% 80% 25 70% 20 60% 50% 15 40% 30% 10 20% 5 10% 0% 0 0.05.0 10.015.020.025.030.0 05 10 15 20 25 30 Time (s) TLP Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/28/19 Percent of I PP TLP Current (A)