TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3014 Series AQ3102 Series RoHS GREEN Pb AQ3102 Series, 1pF, 30kV Diode Array Description The AQ3102 Series integrates 2 channels of low capacitance steering diodes and an additional zener diode to provide protection for automotive electronics equipment that may experience destructive electrostatic discharges (ESD). The AQ3102 Series can safely absorb repetitive ESD strikes above the maximum contact level specified in IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The low off-state capacitance makes it ideal for protecting high-speed signal lines such as USB2.0 or USB 3.0 and 1Gb Ethernet with an extremely low dynamic resistance to protect the most sensitive, state of the art chipsets against ESD transients. Pinout Features ESD, IEC 61000-4-2, Low capacitance of 1pF SP1002-01JTG SP1002-02JTG Pin 1 dot 30kV contact, 30kV air (TYP) per I/O (SC70-3) (SC70-5) ESD, ISO 10605, 330pF Low leakage current of I/O 11 330, 30kV cont5 act, 0.01A (TYP) at 5V 1 30kV air AEC-Q101 qualified 3 GND NC NC EFT, IEC 61000-4-4, 80A Moisture Sensitivity (t =5/50ns) P Level(MSL -1) 4 I/O 2 2 3 Lightning, 8A (8/20s as Halogen-Free, Lead-Free defined in IEC 61000-4-5 and RoHS-Compliant nd 2 Edition) SOT23-3L and SC70-3L PPAP capable Functional Block Diagram Applications LCD/PDP TVs Ultrabooks/Notebooks External Storages Digital Cameras DVD/Blu-ray Players Portable Medical Set Top Boxes Automotive Electronics Smartphones Wearable Technology GND I/O1 I/O2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/04/20 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3014 Series AQ3102 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 8 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A 6.0 V RWM R Breakdown Voltage V I = 1mA 6.5 7.8 V BR R Reverse Leakage Current I V =5V, Any I/O to GND 0.01 0.5 A LEAK R I =1A, t =8/20s, Fwd 9.2 12 V PP p 1 Clamp Voltage V C I =8A, t =8/20s, Fwd 13 16 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.24 DYN p IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV C 1 I/O-GND 3 Diode Capacitance Reverse Bias=0V, f= 3 GHz pF C 0.5 I/O-I/O Note: 1 Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns. 3. Package sizes larger than 0201 can add parasitic capacitance, inductance and resistance. 8/20s Pulse Waveform Clamping voltage vs. I for 8/20s waveshape PP 110% 15.0 100% 90% 12.0 80% 70% 9.0 60% 6.0 50% 40% 3.0 30% 20% 0.0 10% 1.02.0 3.04.0 5.06.0 7.08.0 0% Peak Pulse Current-I (A) PP 0.05.0 10.015.020.025.030.0 Time (s) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/04/20 Percent of I PP Clamp Voltage-V (V) C SP3012