TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - AQ3118 Series RoHS Pb GREEN AQ3118 Series 0.3pF 10 kV Bidirectional Discrete TVS Description The AQ3118 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in IEC 61000-4-2 international standard without performance degradation. The back-to back configuration provides symmetrical ESD protection for data lines when. Pinout Features ESD protection of 10kV L ow leakage current of contact discharge, 15kV 50nA (max) at 18V air discharge, (IEC 61000- Space efficient 0402 4-2) footprint EFT protection, AEC-Q101 qualified 1 2 IEC 61000-4-4, 40A Halogen free, lead free and (tp=5/50ns) RoHS compliant Lightning, 2A (8/20 as Moisture Sensitivity defined in IEC 61000-4-5 Level(MSL -1) nd 2 edition) PPAP capable Low capacitance of 0.3pF V =0V R Functional Block Diagram Applications Tablets MP3/ PMP Ultrabook Set Top Boxes eReader Portable Medical 12 Smart Phones NFC and FeliCa Digital Cameras Automotive applications 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/16/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - AQ3118 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Breakdown Voltage V I =1mA 20 30 V BR R Reverse Standoff Voltage V 18 V RWM Reverse Leakage Current I V =18V with 1pin at GND 1 50 nA LEAK R I =1A, t =8/20s, Fwd 31 35 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 34 38 V PP p IEC 61000-4-2 (Contact) 10 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 15 kV 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.75 DYN P Note: 1. Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Capacitance vs. Reverse Bias 0.5 110% 100% 90% 0.4 80% 70% 0.3 60% 50% 0.2 40% 30% 20% 0.1 10% 0% 0 0.05.0 10.015.020.025.030.0 0369 12 15 18 Time (s) Bias Voltage (V) Transmission Line Pulsing (TLP) Plot Insertion Loss (S21) 0 20 -1 18 -2 16 -3 14 -4 12 10 -5 8 -6 6 -7 4 -8 2 -9 0 05 10 15 20 25 30 35 40 45 50 55 60 -10 10 1001000 TLP Voltage (V) Frequency (MHz) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/16/19 Percent of I PP TLP Current (A) Capacitance (pF) Attenuation (dB)