TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - AQ3130 Series RoHS GREEN AQ3130 Series 0.3pF 10 kV Bidirectional Discrete TVS Pb Description The AQ3130 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in IEC 61000-4-2 international standard without performance degradation. These back- to-back components provide symmetric protection with or without AC being present. Features Pinout SOD882 ESD protection of 10kV Low capacitance of 0.3pF contact discharge, 15kV V =0V R air discharge, (IEC 61000- Low leakage current of 1 2 4-2) 50nA (max) at 28V EFT protection, Space efficient SOD882 IEC 61000-4-4, 40A footprint (tp=5/50ns) AEC-Q101 qualified Lightning, 2A (8/20 as Halogen free, lead free defined in IEC 61000-4-5 and RoHS compliant nd 2 edition) Moisture Sensitivity PPAP capable Level(MSL -1) Functional Block Diagram Applications Tablets MP3/ PMP Ultrabook Set Top Boxes eReader Portable Medical Smart Phones NFC and FeliCa Digital Cameras Automotive applications 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/09/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - AQ3130 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V IR=1uA - - 28 V RWM Reverse Leakage Current I V =28V with 1pin at GND - 1 50 nA LEAK R I =1A, t =8/20s, Fwd - 39 44 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd - 42 48 V PP p IEC 61000-4-2 (Contact) 10 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 15 - - kV 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 1.0 - DYN P 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz - 0.3 0.45 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 0.5 100% 90% 0.4 80% 70% 0.3 60% 50% 40% 0.2 30% 20% 0.1 10% 0% 0.05.0 10.015.020.025.030.0 0 Time (s) 04 81216202428 Bias Voltage (V) Transmission Line Pulsing (TLP) Plot Insertion Loss (S21) 20 0 18 -1 16 -2 14 -3 12 -4 10 -5 8 -6 6 -7 4 -8 2 -9 0 05 10 15 20 25 30 35 40 45 50 55 60 -10 10 1001000 TLP Voltage (V) Frequency (MHz) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/09/19 Percent of I PP TLP Current (A) Attenuation (dB) Capacitance (pF)