TVS Diode Arrays (SPA Diodes) Enhanced ESD Discrete TVS Series - SP3530 AQ3522-01FTG RoHS Pb GREEN AQ3522-01FTG, 0.15pF 22kV Bidirectional TVS diode Description The AQ3522-01FTG integrates ultra low capacitance diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One , HDMI, USB3.0 and USB2.0. Pinout Features ESD, IEC 61000-4-2, Facilitates excellent signal 22kV contact, 30kV air integrity Pin 1 EFT, IEC 61000-4-4, 40A PPAP capable (t =5/50ns) P AEC-Q101 qualified Lightning, 2.5A (8/20s as Halogen free, Lead free defined in IEC 61000-4-5 and RoHS compliant 2nd edition) Moisture Sensitivity Level Low capacitance of (MSL -1) 0.15pF (TYP) at 3GHz ESD, ISO 10605, 330pF 330, 20kV contact, Pin 2 20kV air Functional Block Diagram Applications Ultra-high speed data Consumer , mobile and lines portable electronics USB 3.1, 3.0, 2.0 Tablet PC and external storage with high speed HDMI 2.0, 1.4a, 1.3 interfaces (TM) DisplayPort Applications requiring V-by-One high ESD performance in LVDS interfaces small packages Automotive application TVS Diode Arrays (SPA Diodes) Enhanced ESD Discrete TVS Series - SP3530 AQ3522-01FTG Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5 V RWM R Breakdown Voltage V I =1mA 8.5 9.2 V BR R Reverse Leakage Current I V =5V 0.02 0.1 A LEAK R 1 Clamp Voltage V I =2.5A, t =8/20s, I/O to GND 15.5 18 V C PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 1.2 DYN p IEC 61000-4-2 (Contact) 22 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1,3 Diode Capacitance C Reverse Bias=0V, f= 3 GHz 0.15 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns. 3. Package sizes larger than 0201 can add parasitic capacitance, inductance and resistance. Clamping voltage vs. I for 8/20s waveshape 8/20s Pulse Waveform PP 20.0 110% 18.0 100% 16.0 90% 80% 14.0 70% 12.0 60% 10.0 50% 8.0 40% 6.0 30% 4.0 20% 2.0 10% 0.0 0% 11.5 22.5 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) Peak Pulse Current-I (A) PP Clamp Voltage (V ) C Percent of I PP