TVS Diode Arrays (SPA Diodes) Enhanced ESD Discrete TVS Series - AQ3522-01LTG AQ3522-01LTG, 0.15pF 22kV bidirectional TVS diode RoHS Pb GREEN Description The AQ3522 integrates ultra low capacitance diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One , HDMI, USB3.0, USB2.0, and IEEE 1394. Pinout Features ESD, IEC 61000-4-2, Facilitates excellent signal 22kV contact, 30kV air integrity 1 EFT, IEC 61000-4-4, 40A PPAP capable (t =5/50ns) P AEC-Q101 qualified Lightning, 2.5A (8/20s as Halogen free, Lead free defined in IEC 61000-4-5 and RoHS compliant nd 2 edition) Moisture Sensitivity Level Low capacitance of (MSL -1) 0.15pF (TYP) at 3GHz ESD, ISO 10605, 330pF 2 330, 21kV contact, 23kV air Functional Block Diagram Applications Ultra-high speed data Consumer , mobile and lines portable electronics USB 3.1, 3.0, 2.0 Tablet PC and external storage with high speed HDMI 2.0, 1.4a, 1.3 interfaces (TM) DisplayPort Applications requiring V-by-One high ESD performance in LVDS interfaces small packages Automotive application 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/14/18 TVS Diode Arrays (SPA Diodes) Enhanced ESD Discrete TVS Series - AQ3522-01LTG Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -45 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5 V RWM R Breakdown Voltage V I =1mA 8.5 9.2 V BR R Reverse Leakage Current I V =5V 0.02 0.1 A LEAK R 1 Clamp Voltage V I =2.5A, t =8/20s, I/O to I/O 15.5 18 V C PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 1.2 DYN p IEC 61000-4-2 (Contact) 22 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1,3 Diode Capacitance C Reverse Bias=0V, f= 3 GHz 0.15 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns. 3. Package sizes larger than 0201 can add parasitic capacitance, inductance and resistance. Clamping voltage vs. I for 8/20s waveshape 8/20s Pulse Waveform PP 20 110% 100% 90% 15 80% 70% 60% 10 50% 40% 5 30% 20% 10% 0 11.5 22.5 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Peak Pulse Current -I (A) PP Time (s) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/14/18 Clamp Voltage (V ) C Percent of I PP