TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - AQHVxx-01LTG-C Series Pb GREEN RoHS AQHVxx-01LTG-C Series, 300W Discrete Bidirectional TVS Diode Description This AQHVxx-01LTG-C series provides a highly effective ESD, EFT, and lightning surge protection component. It is ideally suited for power interfaces, passenger charging interfaces, LED lighting modules, and low speed I/Os. Its rating of 30kV ESD exceeds the maximum ESD rating requirements as defined in the IEC 61000-4-2 international standard without suffering any performance degradation. The AQHV12-C can withstand up to 10A of surge current nd as defined by IEC 61000-4-5 2 edition providing low voltage clamping levels during lightning induced events. Pinout Features ESD, IEC 61000-4-2, Low leakage current 1 30kV contact, 30kV air AEC-Q101 qualified EFT, IEC 61000-4-4, 40A Moisture Sensitivity Level(MSL -1) (5/50ns) Halogen free, lead free Lightning, 10A (8/20s as and RoHS compliant defined in IEC 61000-4-5 nd 2 edition) for AQHV12-C Low clamping voltage 2 PPAP capable This component is bidirectional Applications Functional Block Diagram LED Lighting Modules RS232 / RS485 Portable Instrumentation CAN and LIN Bus General Purpose I/O Automotive application 2 1 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 07/08/19 TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - AQHVxx-01LTG-C Series Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 300 W pk p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. AQHV12-C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 12 V RWM R Breakdown Voltage V I =1mA 13.3 15 V BR R Reverse Leakage Current I V =12V 5 50 nA LEAK R I =1A, t =8/20s, I/O to I/O 18 21 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, I/O to I/O 27 30 V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.34 DYN p 1 Peak Pulse Current I t =8/20s 10 A pp p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 27 30 pF I/O-I/O AQHV15-C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 15 V RWM R Breakdown Voltage V I =1mA 16.7 19.5 V BR R Reverse Leakage Current I V =15V 5 50 nA LEAK R I =1A, t =8/20s, I/O to I/O 23.5 27 V PP p 1 Clamp Voltage V C I =7A, t =8/20s, I/O to I/O 33.5 37 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.36 DYN p 1 Peak Pulse Current I t =8/20s 7 A pp p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 21 24 pF I/O-I/O AQHV24-C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 24.0 V RWM R Breakdown Voltage V I =1mA 26.7 29.5 V BR R Reverse Leakage Current I V =24V 5 50 nA LEAK R I =1A, t =8/20s, I/O to I/O 35.5 40 V PP p 1 Clamp Voltage V C I =5A, t =8/20s, I/O to I/O 49.5 55 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.52 DYN p 1 Peak Pulse Current I t =8/20s 5.0 A pp p IEC 61000-4-2 (Contact Discharge) 25 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 15 17 pF I/O-I/O 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 07/08/19