X-On Electronics has gained recognition as a prominent supplier of K1500E70RP2 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. K1500E70RP2 ESD Suppressors / TVS Diodes are a product manufactured by Littelfuse. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

K1500E70RP2 Littelfuse

K1500E70RP2 electronic component of Littelfuse
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See Product Specifications
Part No.K1500E70RP2
Manufacturer: Littelfuse
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 150V Sidac TO92
Datasheet: K1500E70RP2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4978 ea
Line Total: USD 0.5

Availability - 104663
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
104663
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4978
2000 : USD 0.4859
4000 : USD 0.4802
6000 : USD 0.4768
10000 : USD 0.4688

104663
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 17
Multiples : 1
17 : USD 0.4978
2000 : USD 0.4859
4000 : USD 0.4802
6000 : USD 0.4768
10000 : USD 0.4688

   
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RoHS - XON
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We are delighted to provide the K1500E70RP2 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the K1500E70RP2 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Teccor brand Thyristors High Energy Unidirectional SIDACs RoHS K2xx0yHU Series Description The new K2xx0yHU is a higher energy SIDAC switch for gas ignition applications requiring higher current pulse current especially at low repetition rate. It is offered in a DO-15 leaded package and DO-214AA surface mount package. Voltage activation of this solid state switch is accomplished with peak volt age level of 190 to 260Volts. The SIDAC is a silicon bilateral voltage triggered Thyristor switch that switches on through a negative resistance region to a low on-state voltage. Conduction will continue until current is interrupted or lowered below minimum holding current of the device. Features A C circuit oriented RoHS compliant Schematic Symbol T riggering Volt age of 190 Unidirectional to 260V 280A Pulse current capability A K Applications Suitable for high voltage power supplies, natural gas igniters, and Xenon fl ash ignition. Electrical Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Max Unit K20 0 0yHU 190 210 K220 0yHU 210 230 V Breakover/Trigger Voltage V BO K240 0yHU 230 250 K250 0yHU 240 260 K20 0 0yHU 180 K220 0yHU 190 V Repetitive Peak Off-st ate Volt age V DRM K240 0yHU 210 K250 0yHU 220 I 50/60Hz, T < 125C On-st ate RMS Current 1 A T(RMS) J V I = 1A Peak On-st ate Volt age 1.5 V TM T R = 100 L I Dynamic Holding Current 60 mA H 50/60Hz Sine Wave (V V ) BO S R Switching Resistance, R = 50/60Hz Sine Wave 100 S S (I I ) S BO I Breakover Current 50/60Hz Sine Wave 500 A BO 60Hz 120 Peak Repetitive Pulse Current I t = 10s A TRM p (refer to figure 4) 5Hz 280 di/dt Critical Rate of Rise of On-St ate Current 220 A/s dv/dt Critical Rate of Rise of Off-St ate Volt age 1500 V/s T Storage Temperature Range -40 150 C S T Junction Temperature Range -40 125 C J DO-15 18 R Thermal Resist ance, Junction to Lead C/W JL DO-214AA 30 R Thermal Resist ance, Junction to Ambient DO-15 75 C/W JA Note: xxx - voltage, y = package 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/25/16 Teccor brand Thyristors High Energy Unidirectional SIDACs Figure 2: On-state Current vs. On-state Figure 1: V-I Characteristics Voltage (Typical) +I 9 I T 8 (V -V ) BO S I 7 H RR = SS (I -I ) S BO 6 I S 5 I BO I DRM 4 -V +V 3 V BO V V T S 2 V DRM 1 0 0.6 0.8 1.01.2 1.41.6 1.8 2.0 Instantaneous On-state Voltage (v ) Volts T -I Figure 3: Power Dissipation vs. On-state Current Figure 4: Repetitiv e Peak On-state Current (I ) TRM (Typical) vs. Pulse Width at Various Frequencies 1.2 1000 di/dt Limit Line I TM 1.0 t O 1/f 0.8 100 1 kHz 0.6 5 Hz 60 Hz 5 kHz 0.4 10 CURRENT WAVEFORM: Sinusoidal 0.2 LOAD: Resistive or Inductive CONDUCTION ANGLE: See basic SIDAC circuit in Figure 12 0.0 1 0.0 0.2 0.4 0.6 0.8 1.01.2 110100 1000 RMS On-State Current I - Amps Pulse Base Width (t ) - us T(RMS) O Figure 5: Sur ge Peak On-state Current Figure 6: Normalized V Change BO vs. Number of Cycles vs. Junction Temperature 10% 100 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive 8% RMS ON-STATE CURRENT: I RMS Maximum Rated T Value at Specied Junction Temperature 6% 4% 2% 10 0% -2% Notes: 1) Blocking capability may be lost during -4% and immediately following surge current interval. -6% 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. -8% 1 -40 -20 020406080100 120140 110100 1000 Junction Temperature (T ) -- C Surge Current Duration -- Full Cycles J 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/25/16 Peak Surge (Non-repetitive) Average On-State Power Dissipation On-state Current (I ) Amps P - Watts TSM D(AV) Instantaneous On-state Current (i ) Amps V Change -- % Repetitive Peak On-State Current (I ) - Amps T BO TRM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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