MAC12HCDG, MAC12HCMG,
MAC12HCNG
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever fullwave,
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silicon gatecontrolled devices are needed.
TRIACS
Features
12 AMPERES RMS
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
400 thru 800 VOLTS
High Commutating di/dt and High Immunity to dv/dt @ 125C
Minimizes Snubber Networks for Protection
MT2 MT1
Blocking Voltage to 800 Volts
G
On-State Current Rating of 12 Amperes RMS at 80C
MARKING
High Surge Current Capability 100 Amperes
DIAGRAM
Industry Standard TO-220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
These Devices are PbFree and are RoHS Compliant*
MAC12HCxG
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
AYWW
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1) V V TO220
DRM,
(T = 40 to 125C, Sine Wave, V 1
CASE 221A
J RRM
2
50 to 60 Hz, Gate Open)
3
STYLE 4
MAC12HCDG 400
MAC12HCMG 600
x = D, M, or N
MAC12HCNG 800
A = Assembly Location (Optional)*
On-State RMS Current I 12 A
T(RMS)
Y = Year
(All Conduction Angles; T = 80C)
C
WW = Work Week
Peak Non-Repetitive Surge Current I 100 A G = PbFree Package
TSM
(One Full Cycle, 60 Hz, T = 125C)
J
* The Assembly Location code (A) is optional. In
2 2
Circuit Fusing Consideration (t = 8.33 ms) I t 41 A sec cases where the Assembly Location is stamped
on the package the assembly code may be blank.
Peak Gate Power P 16 W
GM
(Pulse Width 1.0 s, T = 80C)
C
Average Gate Power P 0.35 W
G(AV)
PIN ASSIGNMENT
(t = 8.3 ms, T = 80C)
C
1 Main Terminal 1
Operating Junction Temperature Range T 40 to +125 C
J
2
Main Terminal 2
Storage Temperature Range T 40 to +150 C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
3 Gate
device. If any of these limits are exceeded, device functionality should not be
4 Main Terminal 2
assumed, damage may occur and reliability may be affected.
1. V and V for all types can be applied on a continuous basis. Blocking
DRM RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device Package Shipping
MAC12HCDG TO220 50 Units / Rail
(PbFree)
MAC12HCMG TO220 50 Units / Rail
(PbFree)
*For additional information on our PbFree strategy and soldering details, please
MAC12HCNG TO220 50 Units / Rail
download the ON Semiconductor Soldering and Mounting Techniques
(PbFree)
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2014
1 Publication Order Number:
November, 2014 Rev. 5 MAC12HC/DMAC12HCDG, MAC12HCMG, MAC12HCNG
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoCase R 2.2 C/W
JC
JunctiontoAmbient R 62.5
JA
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C
L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted; Electricals apply in both directions)
J
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current I , I mA
DRM RRM
(V = Rated V , V , Gate Open) T = 25C 0.01
D DRM RRM J
T = 125C 2.0
J
ON CHARACTERISTICS
Peak On-State Voltage (Note 2) V V
TM
(I = 17 A) 1.85
TM
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA
GT
D L
MT2(+), G(+) 10 50
MT2(+), G() 10 50
MT2(), G() 10 50
Holding Current I mA
H
(V = 12 V, Gate Open, Initiating Current = 150 mA) 60
D
Latch Current (V = 12 V, I = 50 mA) I mA
D G L
MT2(+), G(+) 60
MT2(+), G() 80
MT2(), G() 60
Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V V
D L GT
MT2(+), G(+) 0.5 1.5
MT2(+), G() 0.5 1.5
MT2(), G() 0.5 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt) 15 A/ms
c
(V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/s, Gate Open,
D TM
T = 125C, f = 250 Hz, C = 10 F, L = 40 mH, with Snubber)
J L L
Critical Rate of Rise of Off-State Voltage dv/dt 600 V/s
(V = Rated V , Exponential Waveform,
D DRM
Gate Open, T = 125C)
J
Repetitive Critical Rate of Rise of On-State Current di/dt 10 A/s
IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/sec; f = 60 Hz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
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