MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full-wave silicon gate controlled solid-state devices are MAC212A8, MAC212A10 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase 2.0 C/W R JC r JunctiontoAmbient 62.5 R JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , DRM (V = Rated V , V Gate Open) T = 25C I D DRM RRM J RRM 10 A T = +125C J 2.0 mA ON CHARACTERISTICS Peak On-State Voltage V 1.3 1.75 V TM I = 17 A Peak Pulse Width = 1 to 2 ms, Duty Cycle 2% TM Gate Trigger Current (Continuous dc) I mA GT (Main Terminal Voltage = 12 Vdc, R = 100 ) L MT2(+), G(+) 12 50 MT2(+), G() 12 50 20 50 MT2(), G() MT2(), G(+) 35 75 Gate Trigger Voltage (Continuous dc) V V GT (Main Terminal Voltage = 12 Vdc, R = 100 ) L MT2(+), G(+) 0.9 2.0 0.9 2.0 MT2(+), G() MT2(), G() 1.1 2.0 MT2(), G(+) 1.4 2.5 Gate NonTrigger Voltage (Continuous dc) V V GD (Main Terminal Voltage = 12 V, R = 100 , T = +125C) L J All Four Quadrants 0.2 Holding Current I 6.0 50 mA H (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) Turn-On Time t 1.5 s gt (V = Rated V , I = 17 A, I = 120 mA, D DRM TM GT Rise Time = 0.1 s, Pulse Width = 2 s) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage dv/dt 5.0 V/ s (c) (V = Rated V , I = 17 A, Commutating di/dt = 6.1 A/ms, D DRM TM Gate Unenergized, T = +85C) C Critical Rate of Rise of Off-State Voltage dv/dt 100 V/ s (V = Rated V , Exponential Voltage Rise, Gate Open, T = +85C) D DRM C