Thyristors Datasheet MAC212A8, MAC212A10 Triacs 400V - 800V Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features & Benefits Blocking Voltage to 800 Volts Gate Triggering Guaranteed in Four Modes (Quadrants) All Diffused and Glass Passivated Junctions for PbF ree Packages are Greater Parameter Uniformity Available and Stability Small, Rugged, Thermowatt Additional Information Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pin Out Resources Accessories Samples Functional Diagram CASE 221A MT2 MT1 STYLE 4 1 G 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/21/21Thyristors Datasheet MAC212A8, MAC212A10 Triacs 400V - 800V Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit 600 MAC212A8 Peak Repetitive OffState Voltage (Note 1) V , DRM 800 V ( 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) V RRM MAC212A10 800 On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T = +85C) I 12 A C T (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, I 100 A TSM T = +25C) Preceded and followed by rated current c 2 Circuit Fusing Considerations (t = 8.3 ms) I t 40 Asec Peak Gate Power (T = +85C, Pulse Width = 10 s) P C GM 20 W Average Gate Power (t = 8.3 ms, T = +85C) P 0.35 W C G (AV) Peak Gate Current (T = +85C, Pulse Width = 10 s) I 2.0 A C GM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.0 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 10 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 125C I - - 2.0 mA D DRM RRM J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (I = 17 A Peak Pulse Width = 1 to 2 ms, Duty Cycle 2%) V 1.3 1.75 V TM TM MT2(+), G(+) 12 50 MT2(+), G() 12 50 Gate Trigger Current (Continuous dc) I mA GT (Main Terminal Voltage = 12 Vdc, R = 100 ) MT2(), G() 20 50 L MT2(), G(+) 35 75 MT2(+), G(+) 0.9 2.0 MT2(+), G() 0.9 2.0 Gate Trigger Voltage (Continuous dc) V V GT (Main Terminal Voltage = 12 Vdc, R = 100 ) MT2(), G() 1.1 2.0 L MT2(), G(+) 1.4 2.5 Gate NonTrigger Voltage (Continuous dc) V 0.2 V GD Main Terminal Voltage = 12 V, R = 100 , T = +125C) All Four Quadrants L J Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = I 6.0 50 mA H 200 mA) Turn-On Time (Rated V , I = 17 A) DRM TM t 1.5 s gt (I = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) GT 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/21/21