MAC228A Series
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for industrial and consumer applications for
fullwave control of AC loads such as appliance controls, heater
controls, motor controls, and other power switching applications.
www.onsemi.com
Features
TRIACS
Sensitive Gate Triggering in 3 Modes for AC Triggering on
8 AMPERES RMS
Sinking Current Sources
200 800 VOLTS
Four Mode Triggering for Drive Circuits that Source Current
All Diffused and GlassPassivated Junctions for Parameter
Uniformity and Stability
MT2 MT1
Small, Rugged, Thermowatt Construction for Low Thermal
G
Resistance and High Heat Dissipation
Center Gate Geometry for Uniform Current Spreading
4
These Devices are PbFree and are RoHS Compliant*
1
2
3
TO220
CASE 221A
STYLE 4
MARKING DIAGRAM
MAC228AxxG
AYWW
xx = 4, 6, 8, or 10
A = Assembly Location (Optional)*
Y = Year
WW = Work Week
G = PbFree Package
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
*For additional information on our PbFree strategy and soldering details, please
ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques
See detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D.
dimensions section on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number:
January, 2015 Rev. 8 MAC228A/DMAC228A Series
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Characteristic Symbol Value Unit
,
Peak Repetitive OffState Voltage (Note 1) V V
DRM,
(T = 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MAC228A4 V 200
J RRM
MAC228A6 400
MAC228A8 600
MAC228A10 800
On-State RMS Current, (T = 80C) Full Cycle Sine Wave 50 to 60 Hz I 8.0 A
C T(RMS)
Peak NonRepetitive Surge Current I 80 A
TSM
(One Full Cycle Sine Wave, 60 Hz, T = 110C)
J
2 2
Circuit Fusing Considerations, (t = 8.3 ms) I t 26 A s
I 2.0 A
Peak Gate Current, (t 2 s, T = 80C)
C GM
Peak Gate Voltage, (t 2 s, T = 80C) V 10 V
C GM
Peak Gate Power, (t 2 s, T = 80C) P 20 W
C GM
Average Gate Power, (t 8.3 ms, T = 80C) P 0.5 W
C G(AV)
Operating Junction Temperature Range T 40 to 110 C
J
Storage Temperature Range T 40 to 150 C
stg
Mounting Torque 8.0 in lb
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
DRM RRM
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance JunctiontoCase R 2.0 C/W
JC
Thermal Resistance JunctiontoAmbient R 62.5 C/W
JA
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C
L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted; Electricals apply in both directions)
C
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (V = Rated V , V ; Gate Open) T = 25C I , 10 A
D DRM RRM J DRM
T = 110C I 2.0
J RRM mA
ON CHARACTERISTICS
Peak On-State Voltage, (I = 11 A Peak, Pulse Width 2 ms, Duty Cycle 2%) V 1.8 V
TM TM
Gate Trigger Current (Continuous DC), (V = 12 V, R = 100 ) I mA
GT
D L
MT2(+), G(+); MT2(+), G(); MT2(), G() 5.0
10
MT2(), G(+)
Gate Trigger Voltage (Continuous DC), (V = 12 V, R = 100 ) V V
GT
D L
MT2(+), G(+); MT2(+), G(); MT2(), G() 2.0
2.5
MT2(), G(+)
Gate NonTrigger Voltage (Continuous DC), (V = 12 V, T = 110C, R = 100 ) V 0.2 V
GD
D C L
All Four Quadrants
Holding Current, (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) I 15 mA
D H
GateControlled TurnOn Time, (V = Rated V , I = 16 A Peak, I = 30 mA) t 1.5 s
D DRM TM G gt
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage, dv/dt 25 V/s
(V = Rated V , Exponential Waveform, T = 110C)
D DRM C
Critical Rate of Rise of Commutation Voltage, (V = Rated V , I = 11.3 A, dv/dt(c) 5.0 V/s
D DRM TM
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T = 80C)
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2