X-On Electronics has gained recognition as a prominent supplier of MAC9DG Triacs across the USA, India, Europe, Australia, and various other global locations. MAC9DG Triacs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

MAC9DG ON Semiconductor

MAC9DG electronic component of ON Semiconductor
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See Product Specifications
Part No.MAC9DG
Manufacturer: ON Semiconductor
Category: Triacs
Description: TRIAC Standard 400 V 8 A Through Hole TO-220AB
Datasheet: MAC9DG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.081 ea
Line Total: USD 3.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6875
10 : USD 1.4556
100 : USD 1.1343
500 : USD 0.937
1000 : USD 0.7397
2000 : USD 0.6904
5000 : USD 0.6559
10000 : USD 0.6312

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.081
10 : USD 1.1543
100 : USD 0.8627
500 : USD 0.7125
1000 : USD 0.5623
2000 : USD 0.5406
5000 : USD 0.5364

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 12
Multiples : 1
12 : USD 1.3505
100 : USD 1.0527
500 : USD 0.895
1000 : USD 0.7135
2000 : USD 0.6904

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MAC9DG from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAC9DG and other electronic components in the Triacs category and beyond.

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Thyristors Datasheet MAC9DG, MAC9MG, MAC9NG Surface Mount 400V - 800V RoHS Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. The MAC9xG is designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 Volts Industry Standard TO220 Package OnState Current Rating of 8.0 Amperes RMS at 100C High Commutating di/dt 6.5 A/ms minimum at 125C Uniform Gate Trigger Currents in Three Quadrants These Devices are PbFree and are RoHS Compliant High Immunity to dv/dt 500 V/s minimum at 125C Minimizes Snubber Networks Additional Information for Protection Functional Diagram MT 2 MT 1 G Resources Accessories Samples Pin Out CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/22/21Thyristors Datasheet MAC9DG, MAC9MG, MAC9NG Surface Mount 400V - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MAC9D 400 Peak Repetitive Off-State Voltage (Note 1) V , DRM MAC9M 600 V (Gate Open, Sine Wave 50 to 60 Hz, T = 40 to 125C) V J RRM MAC9N 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 100C) I 8.0 A C T (RMS) Peak Non-Repetitive Surge Current I 80 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 125C) J 2 Circuit Fusing Consideration (t = 8.3 ms) I t 26 Asec Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 16 W C GM Average Gate Power (t = 8.3 ms, T = 80C) P 0.35 W C G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.2 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.01 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 2) (I = 11 A) V 1.2 1.6 V TM TM MT2(+), G(+) 10 16 50 Gate Trigger Current (Continuous dc) MT2(+), G() I 10 18 50 mA GT (V = 12 V, R = 100 ) D L MT2(), G() 10 22 5.0 Holding Current (V = 12 V, Gate Open, Initiating Current = 150 mA)) I 30 50 mA D H MT2(+), G(+) 20 50 Latching Current MT2(+), G() I 30 80 mA L (V = 24 V, I = 50 mA) D G MT2(), G() 20 50 MT2(+), G(+) 0.5 0.69 1.5 Gate Trigger Voltage MT2(+), G() V 0.5 0.77 1.5 V GT (V = 12 V, R = 100 ) D L MT2(), G() 0.5 0.72 1.5 MT2(+), G(+) 0.2 Gate NonTrigger Voltage MT2(+), G() V 0.2 V GD (V = 12 V, R = 100 , T = 125C) D L J MT2(), G() 0.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/22/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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