Thyristors Surface Mount 250V > MAC3030-8 Pb MAC3030-8 Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features Blocking Voltage to 250 Gate Triggering Volts Guaranteed in Four Modes (Quadrants) All Diffused and Glass Passivated Junctions PbFree Packages are for Greater Parameter Available Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pin Out Functional Diagram MT 2 MT 1 G CASE 221A Additional Information STYLE 4 1 2 Datasheet Resources Samples 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/12/19Thyristors Surface Mount 250V > MAC3030-8 Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) V , DRM 250 V ( 40 to 1125C, Sine Wave, 50 to 60 Hz, Gate Open) V RRM On-State RMS Current (T = +70C) Full Cycle Sine Wave, 50 to 60 Hz I 8.0 A C T (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T = +25C) C I 80 A TSM Preceded and followed by rated current 2 Circuit Fusing Consideration (t = 8.3 ms) I t 26 Asec Peak Gate Current, (TC = +70C, Pulse Width = 10 s) I 2.0 A GM Peak Gate Power (T = +70C, Pulse Width = 10 s) P 20 C GM W Average Gate Power (T = +70C, t = 8.3 ms) P 0.35 W C G (AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.0 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 1.0 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (I = 11 A Peak, Pulse Width 2 ms, TM V 1.2 1.65 V TM Duty Cycle 2%) MT2(+), G(+) 12 50 Gate Trigger Current MT2(+), G() 12 50 (Continuous dc) I mA GT MT2(), G() 20 50 (V = 12 V, R = 100 Ohms) D L MT2(), G(+) 35 75 MT2(+), G(+) 0.9 2.0 Gate Trigger Voltage MT2(+), G() 0.9 2.0 (Continuous dc) V V GT MT2(), G() 1.1 2.0 (V = 12 V, R = 100 ) D L MT2(), G(+) 1.4 2.5 Gate NonTrigger Voltage (Continuous DC), (V = 12 V, T = 110C, R = 100 ) All D C L V 0.2 V GD Four Quadrants Holding Current (V = 12 V , Gate Open, Initiating Current = 200 mA)) I 6.0 50 mA D dc H Turn-On Time (Rated V , I = 11 A) DRM TM t 1.5 s gt (I = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) GT 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/12/19