X-On Electronics has gained recognition as a prominent supplier of BCR3AS-12A(A1#B02) Triacs across the USA, India, Europe, Australia, and various other global locations. BCR3AS-12A(A1#B02) Triacs are a product manufactured by Renesas. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BCR3AS-12A(A1#B02) Renesas

BCR3AS-12A(A1#B02) electronic component of Renesas
BCR3AS-12A(A1#B02) Renesas
BCR3AS-12A(A1#B02) Triacs
BCR3AS-12A(A1#B02)  Semiconductors

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See Product Specifications
Part No. BCR3AS-12A(A1#B02)
Manufacturer: Renesas
Category: Triacs
Description: Thyristor TRIAC 600V 30A 3-Pin(2+Tab) MP-3 Tube
Datasheet: BCR3AS-12A(A1#B02) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
23: USD 1.5645 ea
Line Total: USD 35.98 
Availability - 0
MOQ: 23  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 14 Mar to Thu. 20 Mar
MOQ : 23
Multiples : 1
23 : USD 1.5645

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Packaging
Operating Temp Range
Package Type
Peak Surge On-State Current Max
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Pin Count
Type
Operating Temperature Classification
Rad Hardened
LoadingGif
 
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We are delighted to provide the BCR3AS-12A(A1#B02) from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCR3AS-12A(A1#B02) and other electronic components in the Triacs category and beyond.

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BCR3AS-12A Triac Low Power Use REJ03G0288-0400 Rev.4.00 Dec 19, 2008 Features I : 3 A Non-Insulated Type T(RMS) V : 600 V Planar Passivation Type DRM I , I , I : 15 mA FGT I RGT I RGT III Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 2, 4 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 4. T Terminal 2 1 2 1 3 Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol Unit 12 Note1 Repetitive peak off-state voltage V 600 V DRM Note1 Non-repetitive peak off-state voltage V 720 V DSM Parameter Symbol Ratings Unit Conditions RMS on-state current I 3 A Commercial frequency, sine full wave T(RMS) Note3 360 conduction, Tc = 108C Surge on-state current I 30 A 60Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusing It 3.7 A s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P 3 W GM Average gate power dissipation P 0.3 W G(AV) Peak gate voltage V 6 V GM Peak gate current I 0.3 A GM Junction temperature Tj 40 to +125 C Storage temperature Tstg 40 to +125 C Mass 0.26 g Typical value Notes: 1. Gate open. REJ03G0288-0400 Rev.4.00 Dec 19, 2008 Page 1 of 6 BCR3AS-12A Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 125C, V applied DRM DRM On-state voltage V 1.7 V Tc = 25C, I = 4.5 A, TM TM Instantaneous measurement Note2 Gate trigger voltage I V 1.5 V Tj = 25C, V = 6 V, R = 6 , FGT I D L II V 1.5 V R = 330 RGT G I III V 1.5 V RGT III Note2 Gate trigger current I I 15 mA Tj = 25C, V = 6 V, R = 6 , FGT D L I R = 330 II I 15 mA G RGT I III I 15 mA RGT III Gate non-trigger voltage V 0.2 V Tj = 125C, V = 1/2 V GD D DRM Note3 Thermal resistance R 3.8 C/W Junction to case th(j-c) Critical-rate of rise of off-state (dv/dt)c 5 V/s Tj = 125C Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measureme circuit. 3. Case temperature is measured on the T tab. 2 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c Time Main Current (di/dt)c = 1.5 A/ms 3. Peak off-state voltage Main Voltage Time V = 400 V D (dv/dt)c V D REJ03G0288-0400 Rev.4.00 Dec 19, 2008 Page 2 of 6

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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