BCR3AS-12A Triac Low Power Use REJ03G0288-0400 Rev.4.00 Dec 19, 2008 Features I : 3 A Non-Insulated Type T(RMS) V : 600 V Planar Passivation Type DRM I , I , I : 15 mA FGT I RGT I RGT III Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 2, 4 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 4. T Terminal 2 1 2 1 3 Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol Unit 12 Note1 Repetitive peak off-state voltage V 600 V DRM Note1 Non-repetitive peak off-state voltage V 720 V DSM Parameter Symbol Ratings Unit Conditions RMS on-state current I 3 A Commercial frequency, sine full wave T(RMS) Note3 360 conduction, Tc = 108C Surge on-state current I 30 A 60Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusing It 3.7 A s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P 3 W GM Average gate power dissipation P 0.3 W G(AV) Peak gate voltage V 6 V GM Peak gate current I 0.3 A GM Junction temperature Tj 40 to +125 C Storage temperature Tstg 40 to +125 C Mass 0.26 g Typical value Notes: 1. Gate open. REJ03G0288-0400 Rev.4.00 Dec 19, 2008 Page 1 of 6 BCR3AS-12A Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 125C, V applied DRM DRM On-state voltage V 1.7 V Tc = 25C, I = 4.5 A, TM TM Instantaneous measurement Note2 Gate trigger voltage I V 1.5 V Tj = 25C, V = 6 V, R = 6 , FGT I D L II V 1.5 V R = 330 RGT G I III V 1.5 V RGT III Note2 Gate trigger current I I 15 mA Tj = 25C, V = 6 V, R = 6 , FGT D L I R = 330 II I 15 mA G RGT I III I 15 mA RGT III Gate non-trigger voltage V 0.2 V Tj = 125C, V = 1/2 V GD D DRM Note3 Thermal resistance R 3.8 C/W Junction to case th(j-c) Critical-rate of rise of off-state (dv/dt)c 5 V/s Tj = 125C Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measureme circuit. 3. Case temperature is measured on the T tab. 2 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c Time Main Current (di/dt)c = 1.5 A/ms 3. Peak off-state voltage Main Voltage Time V = 400 V D (dv/dt)c V D REJ03G0288-0400 Rev.4.00 Dec 19, 2008 Page 2 of 6