Data Sheet BCR8CM-12LB R07DS1028EJ0500 600V - 8A - Triac Rev.5.00 Medium Power Use Jun. 28, 2018 Features I : 8 A Tj: 150C T (RMS) V : 600 V Non-insulated Type DRM Note6 I , I , I : 30 mA (20 mA) Planar Passivation Type FGTI RGTI RGT III Outline RENESAS Package code: PRSS0004AG-A RENESAS Package code: PRSS0004AT-A (Package name: TO-220AB) (Package name: TO-220ABA) 4 4 2, 4 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 4. T Terminal 2 1 1 1 2 2 3 3 Application Power supply, motor control, heater control, solenoid control, and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit 12 Note1 Repetitive peak off-state voltage VDRM 600 V Note1 Non-repetitive peak off-state voltage V 720 V DSM Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 8 A Commercial frequency, sine full wave 360 Note3 conduction, Tc = 130 C Surge on-state current I 80 A 60 Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusion I t 26 A s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation P 5 W GM Average gate power dissipation PG (AV) 0.5 W Peak gate voltage V 10 V GM Peak gate current IGM 2 A Junction Temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C R07DS1028EJ0500 Rev.5.00 Page 1 of 8 Jun. 28, 2018 BCR8CM-12LB Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied DRM DRM On-state voltage VTM 1.5 V Tc = 25 C, ITM = 12 A, instantaneous measurement Note2 Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G VRGT 1.5 V V 1.5 V RGT Note2 Note6 Gate trigger curent I 30 mA Tj = 25 C, V = 6 V, R = 6 , FGT D L Note6 R = 330 G IRGT 30 mA Note6 I 30 mA RGT Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM 0.1 V Tj = 150 C, V = 1/2 V D DRM Note3 Note4 Thermal resistance Rth (j-c) 2.0 C/W Junction to case Critical-rate of rise of off-state (dv/dt)c 10 V/ s Tj = 125 C Note5 commutation voltage 1 V/ s Tj = 150 C Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. 4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0 C /W. 5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 6. High sensitivity (IGT 20 mA) is also available. (IGT item:1) Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C/150C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 4.0 A/ms Time Main Voltage 3. Peak off-state voltage (dv/dt)c V D V = 400 V D R07DS1028EJ0500 Rev.5.00 Page 2 of 8 Jun. 28, 2018