Preliminary Datasheet BCR3PM-12LG R07DS0099EJ0300 (Previous: REJ03G1506-0200) Triac Rev.3.00 Medium Power Use Sep 13, 2010 Features I : 3 A The Product guaranteed maximum junction T (RMS) temperature 150 C V : 600 V DRM Insulated Type I , I , I : 20 mA FGTI RGTI RGT III Planar Type V : 2000 V iso UL Recognized : Yellow Card No. E223904 Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 1 1 2 3 Applications AC no junction Switching, light dimmer, electronic blanket, Control of household electrical appliance such as electric fans, solenoid driver, small motor control, and other general purpose control applications Voltage class Parameter Symbol Unit 12 Note1 Repetitive peak off-state voltage V 600 V DRM Note1 Non-repetitive peak off-state voltage V 720 V DSM Parameter Symbol Ratings Unit Conditions RMS on-state current I 3.0 A Commercial frequency, sine full wave T (RMS) 360conduction, Tc = 130C Surge on-state current I 30 A 60Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusion It 3.7 A s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P 5 W GM Average gate power dissipation P 0.5 W G (AV) Peak gate voltage V 10 V GM Peak gate current I 2 A GM Junction Temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C Mass 2.0 g Typical value Isolation voltage V 2000 V Ta = 25C, AC 1 minute, iso T T G terminal to case 1 2 Notes: 1. Gate open. R07DS0099EJ0300 Rev.3.00 Page 1 of 7 Sep 13, 2010 BCR3PM-12LG Preliminary Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 150C, V applied DRM DRM On-state voltage V 1.5 V Tc = 25C, I = 4.5 A, TM TM instantaneous measurement Note2 Gate trigger voltage V 1.5 V Tj = 25C, V = 6 V, R = 6 , FGT D L R = 330 V 1.5 V G RGT V 1.5 V RGT Note2 Gate trigger curent I 20 mA Tj = 25C, V = 6 V, R = 6 , FGT D L R = 330 I 20 mA G RGT I 20 mA RGT Gate non-trigger voltage V 0.2/0.1 V Tj = 125 C/150 C, V = 1/2 V GD D DRM Note3 Thermal resistance R 5.2 C/W Junction to case th (j-c) Critical-rate of rise of off-state (dv/dt)c 5/1 V/ s Tj = 125C/150 C Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance R in case of greasing is 0.5C/W. th (c-f) 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Supply Voltage Time Tj = 125C/150 C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 1.5 A/ms Time 3. Peak off-state voltage Main Voltage V = 400 V (dv/dt)c D V D R07DS0099EJ0300 Rev.3.00 Page 2 of 7 Sep 13, 2010