Data Sheet
BCR6CM-12LB
R07DS1027EJ0200
600V - 6A - Triac
Rev.2.00
Medium Power Use
Jun. 28, 2018
Features
I : 6 A Tj: 150C
T (RMS)
V : 600 V Non-insulated Type
DRM
Note6
I , I , I : 30 mA (20 mA) Planar Passivation Type
FGTI RGTI RGT III
Outline
RENESAS Package code: PRSS0004AG-A RENESAS Package code: PRSS0004AT-A
(Package name: TO-220AB) (Package name: TO-220ABA)
4 4
2, 4
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
4. T Terminal
2
1
1 1
2 2
3 3
Application
Power supply, motor control, heater control and other general purpose AC control applications.
Maximum Ratings
Parameter Symbol Voltage class Unit
12
Note1
Repetitive peak off-state voltage VDRM 600 V
Note1
Non-repetitive peak off-state voltage V 720 V
DSM
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 6 A Commercial frequency, sine full wave
Note3
360 conduction, Tc = 128 C
Surge on-state current I 60 A 60 Hz sinewave 1 full cycle, peak value,
TSM
non-repetitive
2 2 2
I t for fusion I t 15 A s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Peak gate power dissipation P 5 W
GM
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage V 10 V
GM
Peak gate current IGM 2 A
Junction Temperature Tj 40 to +150 C
Storage temperature Tstg 40 to +150 C
R07DS1027EJ0200 Rev.2.00 Page 1 of 8
Jun. 28, 2018 BCR6CM-12LB Data Sheet
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied
DRM DRM
On-state voltage VTM 1.7 V Tc = 25 C, ITM = 9 A,
instantaneous measurement
Note2
Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 ,
FGT D L
R = 330
G
VRGT 1.5 V
V 1.5 V
RGT
Note2 Note6
Gate trigger curent I 30 mA Tj = 25 C, V = 6 V, R = 6 ,
FGT D L
Note6
R = 330
G
IRGT 30 mA
Note6
I 30 mA
RGT
Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM
0.1 V Tj = 150 C, V = 1/2 V
D DRM
Note3 Note4
Thermal resistance Rth (j-c) 2.5 C/W Junction to case
Critical-rate of rise of off-state (dv/dt)c 10 V/ s Tj = 125 C
Note5
commutation voltage
1 V/ s Tj = 150 C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0 C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. High sensitivity (IGT 20 mA) is also available. (IGT item:1)
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C/150C
(di/dt)c
2. Rate of decay of on-state commutating current
Time
Main Current
(di/dt)c = 3.0 A/ms
Time
Main Voltage
3. Peak off-state voltage
(dv/dt)c
V
D
V = 400 V
D
R07DS1027EJ0200 Rev.2.00 Page 2 of 8
Jun. 28, 2018