X-On Electronics has gained recognition as a prominent supplier of BCR6CM-12LB#BB0 Triacs across the USA, India, Europe, Australia, and various other global locations. BCR6CM-12LB#BB0 Triacs are a product manufactured by Renesas. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BCR6CM-12LB#BB0 Renesas

BCR6CM-12LB#BB0 electronic component of Renesas
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Part No.BCR6CM-12LB#BB0
Manufacturer: Renesas
Category: Triacs
Description: BCR6CM-12LB#BB0
Datasheet: BCR6CM-12LB#BB0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.1267 ea
Line Total: USD 33.01 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8
Multiples : 1
8 : USD 4.1267
10 : USD 1.122

   
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We are delighted to provide the BCR6CM-12LB#BB0 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCR6CM-12LB#BB0 and other electronic components in the Triacs category and beyond.

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Data Sheet BCR6CM-12LB R07DS1027EJ0200 600V - 6A - Triac Rev.2.00 Medium Power Use Jun. 28, 2018 Features I : 6 A Tj: 150C T (RMS) V : 600 V Non-insulated Type DRM Note6 I , I , I : 30 mA (20 mA) Planar Passivation Type FGTI RGTI RGT III Outline RENESAS Package code: PRSS0004AG-A RENESAS Package code: PRSS0004AT-A (Package name: TO-220AB) (Package name: TO-220ABA) 4 4 2, 4 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 4. T Terminal 2 1 1 1 2 2 3 3 Application Power supply, motor control, heater control and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit 12 Note1 Repetitive peak off-state voltage VDRM 600 V Note1 Non-repetitive peak off-state voltage V 720 V DSM Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 6 A Commercial frequency, sine full wave Note3 360 conduction, Tc = 128 C Surge on-state current I 60 A 60 Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusion I t 15 A s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation P 5 W GM Average gate power dissipation PG (AV) 0.5 W Peak gate voltage V 10 V GM Peak gate current IGM 2 A Junction Temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C R07DS1027EJ0200 Rev.2.00 Page 1 of 8 Jun. 28, 2018 BCR6CM-12LB Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied DRM DRM On-state voltage VTM 1.7 V Tc = 25 C, ITM = 9 A, instantaneous measurement Note2 Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G VRGT 1.5 V V 1.5 V RGT Note2 Note6 Gate trigger curent I 30 mA Tj = 25 C, V = 6 V, R = 6 , FGT D L Note6 R = 330 G IRGT 30 mA Note6 I 30 mA RGT Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM 0.1 V Tj = 150 C, V = 1/2 V D DRM Note3 Note4 Thermal resistance Rth (j-c) 2.5 C/W Junction to case Critical-rate of rise of off-state (dv/dt)c 10 V/ s Tj = 125 C Note5 commutation voltage 1 V/ s Tj = 150 C Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. 4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0 C /W. 5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 6. High sensitivity (IGT 20 mA) is also available. (IGT item:1) Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C/150C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 3.0 A/ms Time Main Voltage 3. Peak off-state voltage (dv/dt)c V D V = 400 V D R07DS1027EJ0200 Rev.2.00 Page 2 of 8 Jun. 28, 2018

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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