NGD8209N Ignition IGBT 12 A, 410 V NChannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Littelfuse.com monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 12 AMPS Features 410 VOLTS Ideal for CoilonPlug Applications V 2.0 V CE(on) DPAK Package Offers Smaller Footprint and Increased Board Space I = 6.0 A, V 4.0 V C GE GateEmitter ESD Protection C Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability R G G These are PbFree Devices R GE MAXIMUM RATINGS (T = 25C unless otherwise noted) J E Rating Symbol Value Unit CollectorEmitter Voltage V 445 V CES DC 4 DPAK CollectorGate Voltage V 445 V CER DC CASE 369C GateEmitter Voltage V 15 V 2 GE DC 1 STYLE 7 3 Collector CurrentContinuous I 12 A C DC T = 25C Pulsed 30 A C AC MARKING DIAGRAM ESD (Human Body Model) ESD kV 1 R = 1500 , C = 100 pF 8.0 Gate ESD (Machine Model) R = 0 , C = 200 pF ESD 800 V YWW 4 2 Total Power Dissipation T = 25C P 94 Watts C D NGD Collector Collector Derate above 25C 0.63 W/C 8209G Operating and Storage Temperature Range T , T 55 to C J stg 3 +175 Emitter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Y = Year Operating Conditions is not implied. Extended exposure to stresses above the WW = Work Week Recommended Operating Conditions may affect device reliability. G = PbFree Device ORDERING INFORMATION Device Package Shipping NGD8209NT4G DPAK 2500 / Tape & Reel (PbFree) Specifications subject to change without notice. 2016 Littelfuse, Inc. 1 Publication Order Number: September 19, 2016 Rev. 0 NGD8209N/DNGD8209N UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 7.4 A, L = 10 mH, Starting T = 25C 274 CC GE L J THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 1.6 C/W JC Thermal Resistance, Junction to Ambient (Note 1) R 105 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 380 410 435 V CES C J DC 150C I = 10 mA T = 40C to 390 420 445 C J 150C Zero Gate Voltage Collector Current I T = 25C 1.0 25 A CES J DC V = 350 V, CE T = 150C 9.0 50 J V = 0 V GE T = 40C 0.5 15 J Reverse CollectorEmitter Leakage Current I T = 25C 0.5 1.0 mA ECS J V = 24 V CE T = 150C 10 30 J T = 40C 0.05 0.5 J Reverse CollectorEmitter Clamp Voltage B T = 25C 26 33 38 V VCES(R) J DC I = 75 mA C T = 150C 29 36 41 J T = 40C 24 32 36 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 10 13 16 V GES G J DC 150C GateEmitter Leakage Current I V = 10 V T = 40C to 380 635 1000 A GES GE J DC 150C Gate Resistor R T = 40C to 70 G J 150C Gate Emitter Resistor R T = 40C to 10 16 26 GE J k 150C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V T = 25C 1.0 1.42 2.0 V GE(th) J DC I = 1.0 mA, C T = 150C 0.7 0.95 1.5 J V = V GE CE T = 40C 1.1 1.62 2.2 J Threshold Temperature Coefficient 3.5 mV/C (Negative) 2. Pulse Test: Pulse Width 300 S, Duty Cycle 2%. Specifications subject to change without notice. 2016 Littelfuse, Inc. 2 Publication Order Number: September 19, 2016 Rev.0 NGD8209N/D