TVS Diode Arrays (SPA Diodes) SESD Series Enhanced ESD Discrete TVS RoHS Pb GREEN ELV SESD Series Enhanced ESD Discrete TVS Description The SESD Series Enhanced ESD Discrete TVS provides ultra low capacitance unidirectional and bidirectional ESD protection for the worlds most challenging high speed serial interfaces. Ultra low capacitance helps ensure excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3.1, HDMI 2.0, DisplayPort, Thunderbolt, and V-by-One . Providing in excess of 22kV contact ESD protection (IEC61000-4-2) while maintaining extremely low leakage and dynamic resistance, offered in the industrys most popular footprints (0402 and 0201), the SESD series sets higher standards for signal integrity and usability. Pinout Features 0.15pF TYP bidirectional L ow profile 0201 and 0402 DFN packages 0201DFN 0402 DFN 0.30pF TYP unidirectional Facilitates excellent signal ESD, IEC61000-4-2, 1 integrity 1 22kV contact, 22kV air EL V Compliant Low clamping voltage RoHS Compliant and of 14V I =2.5A PP Lead-free (Bidirectional) (t =8/20s) P 2 2 Applications Bottom View Ultra-high speed data Consumer , mobile and lines portable electronics USB 3.1, 3.0, 2.0 Tablet PC and external Functional Block Diagram storage with high speed HDMI 2.0, 1.4a, 1.3 interfaces 1 Thunderbolt Applications requiring 1 (TM) DisplayPort high ESD performance in V-by-One small packages LVDS interfaces 2 Additional Information 2 Unidirectional Bidirectional Datasheet Resources Samples 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA Diodes) SESD Series Enhanced ESD Discrete TVS Thermal Information Absolute Maximum Ratings Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range -55 to 150 C I Peak Current (t =8/20s) 2.5 A PP p Maximum Junction Temperature 150 C T Operating Temperature -55 to 125 C OP Maximum Lead Temperature 260 C T Storage Temperature -55 to 150 C STOR (Soldering 20-40s) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Uidirectional Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance V = 0V, f = 3GHz 0.30 pF R Breakdown Voltage V I =1mA 8.80 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I V =5.0V 25 nA L RWM Clamping Voltage V I =2.5A 13.0 V CL PP IEC61000-4-2 (Contact) 22 ESD Withstand Voltage kV IEC61000-4-2 (Air) 22 Bidirectional Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance V = 0V, f = 3GHz 0.15 pF R Breakdown Voltage V I =1mA 9.6 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I V =5.0V 25 nA L RWM Clamping Voltage V I =2.5A 14.0 V CL PP IEC61000-4-2 (Contact) 22 ESD Withstand Voltage kV IEC61000-4-2 (Air) 22 Insertion Loss Diagram - Bidirectional Insertion Loss Diagram - Unidirectional 0 0 -5.0 -5.0 -10.0 -10.0 -15.0 -15.0 -20.0 -20.0 -25.0 -25.0 -30.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Frequency (Hz) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 S21 Insertion Loss (dB) S21 Insertion Loss (dB)