PRODUCT: SESD0201P1BN-0400-090 ChipSESD DOCUMENT: SCD27763 REV LETTER: B Silicon ESD Protector REV DATE: JULY 26, 2016 Overvoltage Protection Device PAGE NO.: Page 1 of 5 Specification Status: Released BENEFITS Silicon ESD device in an EIA-0201 size rectangular passive component SMT package Standard PCB assembly and rework processes Bi-directional operation allows placement on PCB without orientation constraint Appropriate for ESD protection in space-constrained portable electronics and mobile handsets Suitable for +5V operating voltage applications Helps protect electronic circuits against damage from Electrostatic Discharge (ESD) events Assist equipment to pass IEC61000-4-2, level 4 testing PART NUMBERING RoHS compliant and Halogen Free FEATURES Input capacitance 4pF (typ) Low leakage current 1.0A (max) Low working reverse voltage 6.0V (max) ESD maximum rating per IEC61000-4-2 standard (1) o 10kV contact discharge o 16kV air discharge MATERIALS INFORMATION Capable of withstanding numerous ESD strikes Small package size: 0.60mm x 0.30mm (typ) Low package height: 0.30mm (typ) APPLICATIONS SESD 0201 P1BN - 0400 - 090 Cellular phones and portable electronics Series Breakdown Voltage Digital cameras and camcorders EIA Size 9.0V (min) USB 2.0 and computer I/O ports Package Type Input Capacitance Keypads, pushbuttons, low voltage DC lines, P - Packaged SMD 4.0 pF (typ) speakers, headphones, microphones N - No Common pin 1 - one channel Applications requiring high ESD performance B - Bidirectional RoHS Compliant ELV Compliant Halogen Free * HF * Halogen Free refers to: Br900ppm, Cl900ppm, Br+Cl1500ppm Terminal finish: 100% Matte Tin (Sn) 2016 Littelfuse,Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26,2016 PRODUCT: SESD0201P1BN-0400-090 ChipSESD DOCUMENT: SCD27763 REV LETTER: B Silicon ESD Protector REV DATE: JULY 26, 2016 Overvoltage Protection Device PAGE NO.: Page 2 of 5 o Device Characteristics T = 25 C Min Typ Max Unit Input Capacitance V = 0V, f = 1MHz r -- 4.0 5.0 pF Working Reverse Voltage (peak) - V RWM -- -- 6.0 V (2) Breakdown Voltage V I = 1mA br t 9.0 11.0 -- V Leakage current V = 6.0V A -- -- 1.0 RWM Clamping Voltage Ipp=2A, tp=(8/20s) -- 10.0 12.0 V (1) ESD contact discharge per IEC61000-4-2 standard -- -- 10 kV ESD air discharge per IEC61000-4-2 standard -- -- 16 kV Operating (T ) and Storage Temperature Range junction -40 to +125 C (1) 10kV 50 pulses under IEC61000-4-2 8kV 1,000 pulses under IEC61000-4-2 (2) V is measured at test current I br t DEVICE DIMENSIONS AA AA BB CC DD DD Drawing Not To Scale Typical A B C D mm 0.60 0.05 0.30 0.05 0.30 0.05 0.21 0.07 mils* 23.62 2.0 11.81 2.0 11.81 2.0 8.27 2.8 * Round off approximation RECOMMENDED LANDING PATTERN: PCPC Boa Boardrd PaPadd PaPadd WW LL SS LL 2016 Littelfuse,Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26,2016