TVS Diode Arrays (SPA Diodes) SESD Series Enhanced ESD Discrete TVS RoHS Pb GREEN ELV SESD Series Enhanced ESD Discrete TVS Description The SESD Series Enhanced ESD Discrete TVS provides ultra low capacitance unidirectional and bidirectional ESD protection for the worlds most challenging high speed serial interfaces. Ultra low capacitance helps ensure excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3.1, HDMI 2.0, DisplayPort, Thunderbolt, and V-by-One . Providing in excess of 22kV contact ESD protection (IEC 61000-4-2) while maintaining extremely low leakage and dynamic resistance, offered in the industrys most popular footprints (0402 and 0201), the SESD series sets higher standards for signal integrity and usability. Pinout Features 0.15pF TYP bidirectional Facilitates excellent signal integrity 0201 DFN 0402 DFN 0.30pF TYP unidirectional 1 ELV-Compliant ESD, IEC 61000-4-2, 1 RoHS-Compliant and 22kV contact, 22kV air Lead-free Low clamping voltage AEC-Q101 qualified of 14V I =2.5A PP (Bidirectional) (t =8/20s) PPAP capable P 2 Low profile 0201 and 2 0402 DFN packages Bottom View Applications Ultra-high speed data Consumer , mobile and lines portable electronics USB 3.1, 3.0, 2.0 Tablet PC and external Functional Block Diagram storage with high speed HDMI 2.0, 1.4a, 1.3 interfaces Thunderbolt 1 Applications requiring (TM) 1 DisplayPort high ESD performance in V-by-One small packages LVDS interfaces Additional Information 2 2 Unidirectional Bidirectional Datasheet Resources Samples 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/15/20 TVS Diode Arrays (SPA Diodes) SESD Series Enhanced ESD Discrete TVS Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -55 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Uidirectional Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units 1 Diode Capacitance Reverse Bias=0V, f=3GHz 0.30 pF Breakdown Voltage V I =1mA 8.80 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I V =5.0V 25 nA L RWM 1 Clamp Voltage V I =2.5A 13.0 V CL PP IEC61000-4-2 (Contact) 22 1 ESD Withstand Voltage kV IEC61000-4-2 (Air) 22 Bidirectional Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units 1 Diode Capacitance Reverse Bias=0V, f=3GHz 0.15 pF Breakdown Voltage V I =1mA 9.6 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I V =5.0V 25 nA L RWM 1 Clamp Voltage V I =2.5A 14.0 V CL PP IEC61000-4-2 (Contact) 22 1 ESD Withstand Voltage kV IEC61000-4-2 (Air) 22 1. Parameter is guaranteed by design and/or component characterization. Insertion Loss Diagram - Bidirectional Insertion Loss Diagram - Unidirectional 0 0 -5.0 -5.0 -10.0 -10.0 -15.0 -15.0 -20.0 -20.0 -25.0 -25.0 -30.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Frequency (Hz) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/15/20 S21 Insertion Loss (dB) S21 Insertion Loss (dB)
