TVS Diode Arrays (SPA Diodes) SESD Series Ultra Low Capacitance Diode Arrays RoHS Pb GREEN ELV SESD Series Ultra Low Capacitance Diode Arrays Description The SESD series Ultra Low Capacitance Diode Arrays provides signal integrity-preserving unidirectional ESD protection for the worlds most challenging high speed serial interfaces. Compelling packaging options including the standard 1004 DFN 2.5 mm x 1.0 mm layout, the board space-friendly 0802 DFN and 1103 DFN minimize trace layout complexity, and save significant PCB space. The 0402 DFN provides the most flexibility for PCB layout purposes. This series is rated in excess of 20kV contact ESD protection (IEC 61000-4-2) while maintaining extremely low leakage and dynamic resistance, and is offered in the industrys most progressive and popular footprints. The SESD series sets higher standards for signal Pinout integrity and usability. 0402 DFN array 0802 DFN array Features 12 4 3 0.20pF TYP capacitance AEC-Q101 qualified ESD, IEC 61000-4-2, Moisture Sensitivity Level(MSL-1) 20kV contact, 20kV air 12G ELV Compliant Low clamping voltage 3 of 9.2V I =2.0A RoHS Compliant and PP (t =8/20s) Lead Free P Low profile DFN array PPAP capable 1004 DFN array 1103 DFN array packages 1 2 3.G 4 5 G 3 2 1 Facilitates excellent signal integrity 4 5 6 Applications 10 9 8.G 7 6 USB 3.1, 3.0, 2.0 Tablet PC and external storage with high speed Bottom View HDMI 2.0, 1.4a, 1.3 interfaces (TM) DisplayPort Applications requiring ) V-by-One high ESD performance in Functional Block Diagram Thunderbolt small packages LVDS interfaces Automotive applications 15214 2 Consumer, mobile and portable electronics Additional Information G, 3, 8 3 0802/1004 DFN array 0402 DFN array Datasheet Resources Samples 14253 6 1103 DFN array G 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA Diodes) SESD Series Ultra Low Capacitance Diode Arrays Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -55 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance V = 0V, f = 3GHz 0.20 0.22 pF R Breakdown Voltage V I =1mA 9.00 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I V =5.0V 25 50 nA L RWM Clamping Voltage V I =2.0A 9.20 V CL PP Peak Pulse Current t =8/20s 2.0 A P IEC61000-4-2 (Contact) 20 ESD Withstand Voltage kV IEC 61000-4-2 (Air) 20 Insertion Loss Diagram - 1103 DFN Array Insertion Loss Diagram 0 0 -5.0 -5.0 -10.0 -10.0 -15.0 -15.0 -20.0 -20.0 -25.0 -25.0 -30.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Frequency (Hz) Component IV Curve 1.0 0.8 0.6 0.4 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -2 -1 01 2 34 56 78 910 Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 S21 Insertion Loss (dB) S21 Insertion Loss (dB) Current (mA)