TVS Diodes Surface Mount SLD8S series Pb e3 RoHS SLD8S Series Description The SLD8S Series TVS Diode is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against lightning and inductive load switching voltage transient events for severe Automotive Load Dump applications. Features AEC-Q101 qualified Low incremental surge resistance SMTO-263 package, and foot print is compatible to UL Recognized compound industrial popular DO- meeting flammability 218AB package rating V-0 Meet ISO7637-2 5a/5b Meets MSL le vel 1, per Agency Approvals protection and ISO16750 J-STD-020, LF maximun load dump test (refer to peak of 260C Agency Agency File Number APP note for details) For surface mounted E230531 V T = V 25C applications to optimize BR J BR x (1+ T x (T - 25)) board space J (T:Temperature Low profile package Maximum Ratings and Thermal Characteristics Coefficient, typical value is O High temperature (T =25 C unless otherwise noted) A 0.1% to reflow soldering Glass passivated chip guaranteed: 260C/10sec Parameter Symbol Value Unit junction in modified TO- at terminals Peak Pulse Power Dissipation 263 package 2200 W Matte tin leadfree plated 1. 10ms x 150ms test waveform P PPM ESD protection of dat a Halogen free and RoHS 2. 10/1000 test waveform 7000 W lines in accordance with compliant Power dissipation on infinite heatsink at IEC 61000-4-2, 30kV(Air), P 8.0 W Pb-free E3 means 2nd D T = 25 C C 30kV(Contact) level interconnect is Pb- Maximum Instantaneous Forward Voltage EFT protection of data V 1.8 V F free and the terminal finish at 100A for Unidirectional only lines in accordance with material is tin (Sn) (IPC/ Peak forward surge current 8.3m single IEC 61000-4-4 I 1000 A FSM JEDEC J-STD-609A.01) half sine-wave Fast response time: Operating Junction and Storage T , T -55 to 175 C typically less than 1.0ps J STG Temperature Range from 0 Volts to BV min Typical Thermal Resistance Junction to R 0.9 C/W JC Excellent clamping case capability Applications Functional Diagram Bi-directional Designed to protect sensitive electronics from: Cathode Anode - Inductive Load Switching - Alternator Load Dump Uni-directional 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19TVS Diodes Surface Mount SLD8S series Electrical Characteristics (T =25C unless otherwise noted) A O Maximum T =150 C Maximum Breakdown J Test Reverse Maximum Peak Agency Reverse Part Max. Reverse Clamping Voltage V I Current BR T Stand off Pulse Surge Approval Leakage Number Leakage Voltage I (V) Voltage V Current I T R pp I V (Uni) I V V I R R R R C PP (Volts) (A) (mA) (A) (V) (A) MIN MAX SLD8S14A 15.6 17.2 5.0 14 10 50 301 23.2 X SLD8S15A 16.7 18.5 5.0 15 10 50 286 24.4 X SLD8S16A 17.8 19.7 5.0 16 2.0 50 269 26.0 X SLD8S17A 18.9 20.9 5.0 17 2.0 50 253 27.6 X SLD8S18A 20.0 22.1 5.0 18 2.0 50 240 29.2 X SLD8S20A 22.2 24.5 5.0 20 2.0 50 216 32.4 X SLD8S22A 24.4 26.9 5.0 22 2.0 50 197 35.5 X SLD8S24A 26.7 29.5 5.0 24 2.0 50 180 38.9 X SLD8S26A 28.9 31.9 5.0 26 2.0 50 167 42.1 X SLD8S27A 29.9 33.1 5.0 27 2.0 50 160 43.6 X SLD8S28A 31.1 34.4 5.0 28 2.0 50 154 45.4 X SLD8S30A 33.3 36.8 5.0 30 2.0 50 144 48.4 X SLD8S33A 36.7 40.6 5.0 33 2.0 50 132 53.3 X SLD8S36A 40.0 44.2 5.0 36 2.0 50 121 58.1 X SLD8S40A 44.4 49.1 5.0 40 2.0 50 108 64.5 X SLD8S43A 47.8 52.8 5.0 43 2.0 50 101 69.4 X SLD8S48A 53.3 58.9 5.0 48 2.0 50 89.7 77.4 X SLD8S57A 63.8 69.9 5.0 57 2.0 50 75.5 92.7 X Notes: 1. V measured after I applied for 300s, I = square wave pulse or equivalent. BR T T 2. Surge current waveform per 10/1000 exponential wave and derated per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE C62.35. Load Dump Test Wave Form Parameter 12V system 24V system U 65v to 87V 123V to 174V S R 0.5 to 4 1 to 8 i t 40 ms to 400 ms 100 ms to 350 ms d t (10 )ms r -5 Note: LF use td=400ms for 12V system test td=350ms for 24V system 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19