TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SLVU2.8-8 Series RoHS Pb GREEN SLVU2.8-8 Series 2.8V 30A TVS Array Description The SLVU2.8-8 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at 30kV (contact discharge) per IEC 61000-4-2 standard and can safely dissipate up to 30A (IEC 61000-4-5 2nd Edition, t =8/20s) with very low clamping P voltages. Features ESD, IEC 61000-4-2, SOIC-8 (JEDEC MO-012) Pinout 30kV contact, 30kV air pin configuration allows for protection of all 4 EFT, IEC 61000-4-4, 40A differential pair for 1GbE 87 65 (5/50ns) RoHS Compliant and Lightning, IEC 61000-4-5 Lead Free 2nd Edition, 30A (8/20s) Moisture Sensitivity Level Low capacitance of 2.6pF (MSL-1) per line Low leakage current of 0.1A (MAX) at 2.8V 12 34 Applications Functional Block Diagram 10/100/1000 Ethernet Analog Inputs WAN/LAN Equipment Base Stations Pin 1.3.5.7 Switching Systems Desktops, Servers, and Notebooks Additional Information Pin 2.4.6.8 Datasheet Resources Samples 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/22/19 SP4021 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SLVU2.8-8 Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Parameter Rating Units Peak Pulse Power (t =8/20s) 750 W Storage Temperature Range -55 to 150 C P Peak Pulse Current (t =8/20s) 30 A Maximum Junction Temperature 150 C P Operating Temperature -40 to 125 C Maximum Lead Temperature (Soldering 260 C 20-40s) Storage Temperature -55 to 150 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T = 25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A (Each Line) 2.8 V RWM R Reverse Breakdown Voltage V I =2A (Each Line) 3.0 V BR T Snapback Voltage V I =50mA 2.8 V SB SB Reverse Leakage Current I V =2.8V (Each Line) 0.1 A LEAK R I =5A, t =8/20s (Each Line) 8.5 PP P 1 Clamping Voltage V V C I =24A, t =8/20s (Each Line) 17 PP P IEC61000-4-2 (Contact) 30 1 ESD Withstand Voltage V kV ESD IEC61000-4-2 (Air) 30 2 Dynamic Resistance R TLP tp=100ns, (Each Line) 0.3 DYN 1 V =0V, f=1MHz (Each Line) Diode Capacitance C 2.6 3.0 pF R D Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns Capacitance vs. Reverse Bias (Each line) Clamping Voltage vs. Peak Pulse Currennt (Each line) 4.0 30 3.5 25 3.0 ) S 2.5 20 H F Q 2.0 D 15 W L F 1.5 D 10 S D 1.0 & 5 0.5 0 0 00.4 0.81.2 1.62 2.42.8 05 10 15 20 25 30 Bias Voltage (V) Peak Pulse Current-I (A) PP 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/22/19 Clamp Voltage-V (V) C