TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SLVU2.8 Series RoHS Pb GREEN SLVU2.8 Series 2.8V 40A TVS Array Description The SLVU2.8 series was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in parallel with the low voltage TVS to protect one unidirectional line or a high speed data pair when two devices are paired together. These robust structures can safely absorb repetitive ESD strikes at 30kV (contact discharge) per the IEC 61000-4- 2 standard and each structure can safely dissipate up to 40A (IEC 61000-4-5, t =8/20s) with very low clamping P voltages. Features ESD, IEC 61000-4-2, Low leakage current of Pinout 30kV contact, 30kV air 1A (MAX) at 2.8V EFT, IEC 61000-4-4, 40A Small SOT23-3 (JEDEC 3 (5/50ns) TO-236) package saves board space Lightning, IEC 61000-4-5, 2nd edition 40A (8/20s) RoHS compliant and lead- free Low capacitance of 2pF per line (Pin 2 to 1) 1 2 Applications Functional Block Diagram 10/100/1000 Ethernet Analog Inputs WAN/LAN Equipment Base Stations 3 Switching Systems Security Systems Desktops, Servers, and Surveillance Cameras Notebooks Application Example 1 2 NC RJ-45 Connector J1 Additional Information Ethernet PHY Resources Samples J8 NC 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/12/17 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SLVU2.8 Series Electrical Characteristics (T = 25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 2.8 V RWM R Reverse Breakdown Voltage V I =2A 3.0 V BR T Snap Back Voltage V I =50mA 2.8 V SB T Reverse Leakage Current I V =2.8V (Pin 2 or 3 to 1) 1 A LEAK R 1 Clamping Voltage I =5A, t =8/20s (Pin 3 to 1) 5.7 7.0 V PP P 1 Clamping Voltage I =24A, t =8/20s (Pin 3 to 1) 8.3 12.5 V PP P V C 1 Clamping Voltage I =5A, t =8/20s (Pin 2 to 1) 7.0 8.5 V PP P 1 Clamping Voltage I =24A, t =8/20s (Pin 2 to 1) 13.9 15.0 V PP P Dynamic Resistance R (V - V ) / (I - I ) (Pin 2 to 1) 0.4 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 1 V =0V, f=1MHz (Pin 2 to 1) Diode Capacitance C R 2.0 2.5 pF D 1 Note: Parameter is guaranteed by design and/or device characterization. Absolute Maximum Ratings Figure 1: Capacitance vs. Reverse Voltage Parameter Rating Units 4.0 Peak Pulse Power (t =8/20s) 600 W P 3.5 Peak Pulse Current (t =8/20s) 40 A P 3.0 Operating Temperature 40 to 125 C 2.5 Storage Temperature 55 to 150 C 2.0 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device 1.5 at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 DC Bias (V) Figure 3: Pulse Waveform Figure 2: Clamping Voltage vs. I PP 14 110% 100% 12 90% 80% 10 70% 8 60% 50% 6 40% 4 30% 20% 2 10% 0% 0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 05 10 15 20 25 Peak Pulse Current-I (A) Time (s) PP 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/12/17 Clamping Voltage-V (V) C Capacitance (pF) Percent of I PP