TVS Diode Array General Purpose ESD Protection - SM05 through SM36 RoHS Pb GREEN SM Series 400W TVS Diode Array Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM series can absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard without performance degradation and safely dissipate up to 24A of 8/20s induced surge current (IEC- 61000-4-5) with very low clamping voltages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Working voltages: 5V, 30kV contact, 30kV air 12V, 15V, 24V and 36V (AEC-Q101 qualified) EFT, IEC 61000-4-4, 50A Low clamping voltage (5/50ns) Low leakage current Lightning, IEC 61000- AEC-Q101 qualified 1 4-5 2nd edition, 24A (SOT23-3 package) (t =8/20s, SM05) P Moisture Sensitivity Level(MSL -1) 3 2 Applications Industrial Equipment Legacy Ports Test and Medical (RS-232, RS-485) Equipment Security and Alarm Point-of-Sale Terminals Systems Life Support Note: Not Intended for Use in Life Support or Life Saving Applications Motor Controls The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RS-232 Application Example RS-232 Port Transceiver RD TD RTS IC CTS DSR DTR SM15 (x6) (bidirectional implementation) Case GND 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/22/19TVS Diode Array General Purpose ESD Protection - SM05 through SM36 Absolute Maximum Ratings Symbol Parameter Value Units 400 P Peak Pulse Power (t =8/20s) W Pk p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. SM05 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 5.0 V RWM R Reverse Voltage Drop V I =1mA 6.0 V R R Leakage Current I V =5V 1.0 A LEAK R I =1A, t =8/20s, Pin 1 or Pin 2 to Pin 3 9.8 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Pin 1 or Pin 2 to Pin 3 13.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.19 DYN p Peak Pulse Current Ipp t =8/20s 24.0 A 1 p (8/20s) IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV C Reverse Bias=0V, f=1MHz 400 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 350 pF I/O-I/O SM12 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 12.0 V RWM R Reverse Voltage Drop V I =1mA 13.3 V R R Leakage Current I V =12V 1.0 A LEAK R I =1A, t =8/20s, Pin 1 or Pin 2 to Pin 3 18.5 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Pin 1 or Pin 2 to Pin 3 22.5 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.25 DYN p Peak Pulse Current Ipp t =8/20s 17.0 A 1 p (8/20s) IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV C Reverse Bias=0V, f=1MHz 150 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 120 pF I/O-I/O 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/22/19