TTTVS VS VS Diode ArDiode ArDiode Arrrraaaysysys (SP(SP(SPAAA Diodes) Diodes)Diodes) General Purpose ESD Protection - SM712 RoHS Pb GREEN SM712 Series 600W Asymmetrical TVS Diode Array Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to 12V) from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM712 can absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard without performance degradation and safely dissipate up to 19A of 8/20us induced surge current (IEC- 61000-4-5 2nd edition) with very low clamping voltages. Pinout and Functional Block Diagram Features RoHS compliant and Working Voltages: lead-free -7V to 12V 2 1 ESD, IEC 61000-4-2, Low clamping voltage 30kV contact, 30kV air Low leakage current EFT, IEC 61000-4-4, 50A AEC-Q101 Qualified (5/50ns) Moisture Sensitivity 12V Lightning, IEC 61000- 12V Level (MSL-1) 4-5 2nd edition, 19A 7V 7V (t =8/20s) P Applications 3 RS-485 Security Systems Fieldbus AutomatedT eller Machines (ATMs) Modbus Lighting Control - DALI Profibus Life Support Note: Not Intended for Use in Life Support or Life Saving Applications Communication DMX512 The products shown herein are not designed for use in life sustaining or life saving Equipments applications unless otherwise expressly indicated. RS-485 Application Example Additional Information RS-485 Port Receiver A B IC Samples Datasheet Resources SM712 GND 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/22/19 TTTVS VS VS Diode ArDiode ArDiode Arrrraaaysysys (SP(SP(SPAAA Diodes)Diodes)Diodes) General Purpose ESD Protection - SM712 Absolute Maximum Ratings Symbol Parameter Value Units 600 P Peak Pulse Power (t =8/20s) W Pk p 19 I Peak Pulse Current (t =8/20s) A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. SM712 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units I 1A, Pin 3 to Pin 1 or Pin 2 7.0 V R Reverse Standoff Voltage V RWM I 1A, Pin 1 or Pin 2 to Pin 3 12.0 V R I =1mA, Pin 3 to Pin 1 or Pin 2 7.5 V Reverse Breakdown R V R Voltage I =1mA, Pin 1 or Pin 2 to Pin 3 13.3 V R V =7V 20 A R Leakage Current I LEAK V =12V 1 A R I =1A, t =8/20s, Pin 1 or Pin 2 to Pin 3 19 V PP p I =1A, t =8/20s, Pin 3 to Pin 1 or Pin 2 11 V PP p 1 Clamp Voltage V C I =19A, t =8/20s, Pin 1 or Pin 2 to Pin 3 31 V PP p I =19A, t =8/20s, Pin 3 to Pin 1 or Pin 2 19 V PP p 1 Dynamic Resistance R (V - V ) / (I - I ) 0.5 DYN C2 C1 PP2 PP1 IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V, f=1MHz 1 Diode Capacitance C 75 pF I/O-GND Pin 1 or Pin 2 to Pin 3 Notes : 1. Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias Clamping Voltage vs. I PP 35 80 30 70 60 25 Pin 1 or Pin 2 to Pin 3 50 20 40 15 30 Pin 3 to Pin1 or Pin 2 20 10 10 5 0 0 02468 10 12 02468 10 12 14 16 18 20 Bias Voltage (V) Peak Pulse Current-I (A) PP 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/22/19 Capacitance (pF) Clamp Voltage (VC)