TVS Diode Array (SPA Diodes) Ultra Low Capacitance Diode Arrays Series RoHS Pb GREEN ELV Ultra Low Capacitance Diode Arrays Series Description This Ultra Low Capacitance Diode Arrays Series provides signal integrity-preserving unidirectional ESD protection for the worlds most challenging high speed serial interfaces. The SOD 883 and the standard 2.4 mm x 1.0 mm packaging options provide significant PCB layout space savings and reduces trace layout complexity. This component provides both air and contact ESD protection (IEC 61000-4-2) of 20 kV while maintaining an extremely low leakage current and low dynamic resistance. Due to its low off-state capacitance, this series is compatible with high speed interfaces and thus maintains high bandwidth signal integrity. Features Pinout 0.20 pF TYP capacitance Facilitates excellent signal 0402 DFN array integrity ESD, IEC 61000-4-2, 1 2 EL V Compliant 20kV contact, 20kV air 4 3 Halogen free, Lead free Low clamping voltage and RoHS compliant of 9.2V I =2.0A PP (t =8/20s) AEC-Q101 qualified (0402 P 12G DFN array) L ow profile DFN array 3 packages 1004 DFN array Applications 12 3.G4 5 3 2 G 1 USB 3.1, 3.0, 2.0 Tablet PC and external storage with high speed HDMI 2.0, 1.4a, 1.3 interfaces (TM) DisplayPort Applications requiring ) V-b45y-One 6 high ESD performance in 10 98.G 7 6 Thunderbolt (Light Peak) small packages LVDS interfaces Bottom View Consumer , mobile and portable electronics Functional Block Diagram 15214 2 G, 3, 8 3 1004 DFN array 0402 DFN array 14253 6 G 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/23/20 TVS Diode Array (SPA Diodes) Ultra Low Capacitance Diode Arrays Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance V = 0V, f = 3GHz 0.20 0.22 pF R Breakdown Voltage V I =1mA 9.00 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I V =5.0V 25 50 nA L RWM Clamping Voltage V I =2.0A 9.20 V CL PP Peak Pulse Current t =8/20s 2.0 A P IEC 61000-4-2 (Contact) 20 ESD Withstand Voltage kV IEC 61000-4-2 (Air) 20 Insertion Loss Diagram Device IV Curve 1.0 0 0.8 -5.0 0.6 0.4 -10.0 0.2 -15.0 0.0 -0.2 -20.0 -0.4 -25.0 -0.6 -0.8 -30.0 -1.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 -2 -1 01 34 56 78 910 2 Frequency (Hz) Voltage (V) TLP 45 40 35 30 25 20 15 10 5 0 -5 0 10 20 30 40 TLP Voltage(V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/23/20 S21 Insertion Loss (dB) TLP Current(A) Current (mA)