TVS Diode Array General Purpose ESD Protection - SP1002 Series RoHS Pb GREEN SP1002 Series 5pF 8kV Bidirectional TVS Array Description Back-to-Back Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4- 2 international standard (Level 4, 8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high- speed signal pins. Pinout Features Low capacitance of 5pF Small package saves SP1002-01JTG SP1002-02JTG (TYP) I/O to I/O board space (SC70-3) (SC70-5) ESD protection of 8kV Lightning Protection, IEC 1 5 contact discharge, 15kV 61000-4-5, 2nd edition 2A 1 air discharge, (Level 4, (8/20s) NC IEC 61000-4-2) NC RoHS compliant and lead EFT protection, IEC free 4 2 3 61000-4-4, 40A AEC-Q101 qualified (5/50ns) Low leakage current of 0.5A (MAX) at 5V Functional Block Diagram Applications Computer Peripherals LCD/PDP TVs SP1002-01JTG SP1002-02JTG Mobile Phones Set Top Boxes 1 3 1 Digital Cameras DVD Players Desktops/Notebooks MP3/PMP Application Example MultiMedia MultiMedia 2 5 4 Device Device Audio In L Audio Out L Additional Information Audio In R Audio Out R 2 x SP1002-01 Datasheet Resources Samples SCART MultiMedia Application of SP1002-01 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/06/19TVS Diode Array General Purpose ESD Protection - SP1002 Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range 55 to 150 C I Peak Current (t =8/20s) 2 A PP p Maximum Junction Temperature 150 C T Operating Temperature 40 to 125 C OP Maximum Lead Temperature T Storage Temperature 55 to 150 C STOR 260 C (Soldering 20-40s) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T = 25C) OP Parameter Symbol Test Conditions Min Typ Max Units Voltage Drop V I =1mA 6.0 9.5 V D R Reverse Standoff Voltage V I 1A with 1 I/O at GND 6.0 V RWM R Leakage Current I V =5V with I/O at GND 0.5 A LEAK R I =1A, t =8/20s, Fwd 9.2 13.0 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 11.2 16.0 V PP p Dynamic Resistance R (V - V ) / (I - I ) 2.0 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 8 kV 1,2 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 15 kV Reverse Bias=0V 6 pF 1 Diode Capacitance C Reverse Bias=2.5V 5 pF D Reverse Bias=5V 5 pF Notes: 1 Parameter is guaranteed by device characterization 2 A minimum of 1,000 ESD pulses are applied at 1s intervals Soldering Parameters Reflow Condition Pb Free assembly t P - Temperature Min (T ) 150C s(min) T P Critical ZoneCritical Zone Pre Heat - Temperature Max (T ) 200C TTLL to to TTPP s(max) RRamp-uamp-upp - Time (min to max) (t ) 60 180 secs T s L t L T Average ramp up rate (Liquidus) Temp (T ) to peak 3C/second max S(max) L Ramp-dowRamp-do n T to T - Ramp-up Rate 3C/second max S(max) L PPreheatreheat - Temperature (T ) (Liquidus) 217C L T S(min) Reflow t - Temperature (t ) 60 150 seconds S L +0/-5 Peak Temperature (T ) 260 C P 25 Time within 5C of actual peak Temperature (t ) 20 40 seconds time to peak temperature p Time Ramp-down Rate 6C/second max Time 25C to peak Temperature (T ) 8 minutes max. P Do not exceed 260C 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/06/19 Temperature