TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1003 Series RoHS GREEN Pb SP1003 Series - 30pF 30kV Unidirectional Discrete TVS Description The SP1003 diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1003 TVS can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 7A of 8/20s surge current (IEC 61000- 4-5) with very low clamping voltages. Pinout Features ESD, IEC 61000-4-2, Tiny SOD723/ SOD882 30kV contact, 30kV air (JEDEC MO-236) package 1 saves board space EFT, IEC 61000-4-4, 40A 1 (5/50ns) Fits solder footprint of industry standard 0402 Lightning, 7A (8/20 as (1005) components defined in IEC 61000-4-5 2 nd 2 AEC-Q101 qualified edition) 2 (SOD882 package) Low leakage current of SOD723 SOD882 100nA (MAX) at 5V (AEC-Q101 qualified) Functional Block Diagram Applications Mobile phones components 1 Smart phones Digital cameras PDAs Portable medical components Portable navigation 2 Application Example I/O poI/O portrt LoLow-w-speed portspeed port ControControllellerr B1B1 B2B2 B3B3 B4B4 (4) SP1003-01 SignalSignal GrGrounoundd Life Support Note: ShieldShield Not Intended for Use in Life Support or Life Saving Applications GrGrounoundd The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/06/19 Outside World TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1003 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 7.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Forward Voltage Drop V I = 10mA 0.8 1.2 V F F Breakdown Voltage V I =1mA 6.0 7.8 8.5 V BR R Reverse Standoff Voltage V I =1A 5.0 V RWM R Reverse Leakage Current I V =5V, I/O to GND 100 nA LEAK R I =6A t =8/20s 11.4 V pp p 1 Clamp Voltage V C I =7A t =8/20s 12.0 V pp p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.25 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f= 1 MHz 30 pF I/O-GND Note: 1 - Parameter is guaranteed by design and/or component characterization. 2 - Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping Voltage vs. I PP 14.0 40.0 12.0 35.0 30.0 10.0 25.0 8.0 20.0 6.0 15.0 4.0 10.0 2.0 5.0 0.0 0.0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Peak Pulse Current-I (A) PP DC Bias (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/06/19 Capacitance (pF) Clamp Voltage (V ) C