SP1006-01UTG Littelfuse

TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1006 Series RoHS Pb GREEN SP1006 Series 25pF 30kV Unidirectional Discrete TVS Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 5A of 8/20s surge current (IEC 61000-4-5, 2nd Edition) with very low clamping voltages. Features RoHS compliant and Low leakage current of Pinout Lead-free 0.5A (MAX) at 5V ESD, IEC 61000-4-2, Space efficient 0201 30kV contact, 30kV air footprint) EFT, IEC 61000-4-4, 40A AEC-Q101 qualified (5/50ns) Lightning, 5A (8/20s as Pin 1 Pin 2 defined in IEC 61000-4-5, 2nd Edition) Functional Block Diagram Applications Mobile phones Portable navigation 1 devices Smart phones Portable medical devices PDAs Digital cameras Application Example Keypads I/O Controller 2 P1 P2 Additional Information Outside P3 IC World P4 Datasheet Resources Samples SP1006 (x4) Case GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/03/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1006 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 5 A PP p T Operating Temperature 40 to 125 C OP T Storage Temperature 55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 6.0 V RWM Breakdown Voltage V I =1mA (Pin 1 to 2) 7.8 V BR R Forward Voltage Drop V I =1mA (Pin 2 to 1) 0.8 V F R Leakage Current I V =5V 0.1 0.5 A LEAK R I =1A, t =8/20s (Pin 1 to 2) 8.3 V pp p 1 Clamp Voltage V C I =2A, t =8/20s (Pin 1 to 2) 9.2 V pp p Dynamic Resistance R (V - V ) / (I - I ) 0.9 DYN C2 C1 PP2 PP1 IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V 25 pF 1 Diode Capacitance C D Reverse Bias=2.5V 15 pF 1 Note: Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias Pulse Waveform 30 110% 100% 25 90% 80% 20 70% 60% 15 50% 40% 10 30% 5 20% 10% 0 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.00.5 1.01.5 2.02.5 3.03.5 4.04.5 5.0 Time (s) Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/03/19 Capacitance (pF) Percent of I PP