TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1007 Series RoHS GREEN Pb SP1007 Series 5pF 8kV Bidirectional Discrete TVS Description The SP1007 diodes are fabricated in a proprietary back-to- back silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1007 TVS can safely absorb repetitive ESD strikes at the maximum level specified in IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The back-to- back configuration provides symmetrical ESD protection for data lines when AC signals are present. Pinout Features ESD, IEC 61000-4-2, Space efficient 0201 and 0201 Flipchip 8kV contact, 15kV air 0402 footprin EFT, IEC 61000-4-4, 40A AEC-Q101 qualified for 12 (5/50ns) SOD882 package Lightning, 2A (8/20 as Moisture Sensitivity Level defined in IEC 61000-4-5 (MSL -1) for SOD882 nd 2 package SOD882 edition) Low capacitance of 5pF Halogen free, lead free (TYP V =5V) and RoHS compliant R 1 2 Low leakage current of 0.1A at 5V AEC-Q101 qualified Applications Mobile Phones MP3/PMP Smart Phones Portable Navigation Components Camcorders Tablets Portable Medical Point of Sale Terminals Digital Cameras Functional Block Diagram Application Example Keypads I/O Controller P1 P2 2 1 P3 IC P4 SP1007-01WTG (x4) GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 06/18/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1007 Series Absolute Maximum Ratings Symbol Parameter Value Units Peak Current I 2.0 A PP (t =8/20s) p Operating T -40 to 125 C OP Temperature Storage T -55 to 150 C STOR Temperature CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A - - 6.0 V RWM R Breakdown Voltage V I =1mA - 8.5 9.5 V BR R Reverse Leakage Current I V =5V - 0.1 0.5 A LEAK R 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.8 - DYN p I =1A, t =8/20s, Fwd 10 PP p 1 Clamp Voltage V - 50 V C I =2A, t =8/20s, Fwd 12 PP p IEC 61000-4-2 (Contact Discharge) 8 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 - - kV 1 Diode Capacitance C Reverse Bias=0V f =1MHZ - 5 6 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias 8/20s Pulse Waveform 7.0 110% 100% 6.0 90% SP1007-01ETG 80% 5.0 70% 4.0 60% 50% SP1007-01WTG 3.0 40% 2.0 30% 20% 1.0 10% 0.0 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 0.5 1.01.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Time (s) Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 06/18/19 Capacitance (pF) Percent of I PP