TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1008 Series RoHS Pb GREEN SP1008 Series 6pF 15kV Bidirectional Discrete TVS Protection Description The SP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (15kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present. Pinout Features RoHS compliant, Low capacitance of 6pF Halogen-free and Lead- ( V =5V) R free Low leakage current of 12 ESD, IEC 61000-4-2, 0.1A at 5V 15kV contact, 15kV air Space efficient 0201 Note: Drawing not to scale EFT, IEC 61000-4-4, 40A footprint (5/50ns) Lightning, 3A (8/20s as defined in IEC 61000-4-5 2nd Edition) Functional Block Diagram Applications Mobile phones Smart phones MP3/PMP External storage 2 PDA Tablets 1 Camcorders Digital cameras Additional Information Application Example Keypads I/O Controller P1 P2 Datasheet Samples Resources Outside P3 IC World P4 SP1008 (x4) GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/10/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1008 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 3.0 A PP p T Operating Temperature 40 to 125 C OP T Storage Temperature 55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 6.0 V RWM Breakdown Voltage V I =1mA 7.0 8.5 V BR R Leakage Current I V =5V with 1 pin at GND 0.1 A LEAK R I =1A, t =8/20s, Fwd 10.7 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 12.0 V PP p Dynamic Resistance R (V - V ) / (I - I ) 1.3 W DYN C2 C1 PP2 PP1 IEC 61000-4-2 (Contact Discharge) 15 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 kV 1 Diode Capacitance C Reverse Bias=5.0V 6 9 pF D Note: 1 Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias Insertion Loss (S21) I/O to GND 0 10.0 -5 9.0 8.0 -10 7.0 -15 6.0 -20 5.0 -25 4.0 -30 3.0 -35 2.0 -40 1.0 -45 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 100 1000 I/O Bias Voltage (V) Frequency (MHz) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/10/19 I/O Capacitance (pF) Attenuation (dB)