Outside W orld TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1011 Series RoHS Pb GREEN SP1011 Series 7pF 15kV Unidirectional TVS Array Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4- 2 international standard (Level 4, 8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protection high- speed signal pins. Pinout Features RoHS compliant and Low leakage current of I/O (1) I/O (4) lead-free 1A (MAX) at 5V ESD, IEC 61000-4-2, Tin y DFN( JEDEC MO- GND GND 15kV contact, 30kV air 229) package (1.25mm x 1.0mm x 0.5mm) Lightning, 2A (8/20s as I/O (2) I/O (3) defined in IEC 61000-4-5 EFT protection 2nd Edition) IEC 61000-4-4, 40A DFN-6 (5/50ns) Low capacitance of 7 pF (1.25x1.0x0.5mm) (TYP) per I/O 2.5V Functional Block Diagram Applications LCD/PDP TV Mobile Phone 65 4 DVD Player Notebook Desktop MP3/PMP Set Top Box Digital camera Application Example Keyboard Input Controller D1 D2 1 2 3 D3 D4 SP1011-04UTG Signal Ground Shield Ground Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/07/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1011 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 2 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Voltage Drop V I = 1mA 7.0 7.8 8.5 V R R Reverse Standoff Voltage V I 1A 6 V RWM R Reverse Leakage Current I V = 5V 0.1 1 A LEAK R I =1A, t =8/20s, Fwd 8.7 V 1 PP p Clamp Voltage V C I =2A, t =8/20s, Fwd 10.2 V PP p Dynamic Resistance R (V - V ) / (I - I ) 1.5 DYN C2 C1 PP2 PP1 IEC 61000-4-2 (Contact Discharge) 15 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias = 0V 12 15 pF 1 Diode Capacitance C D Reverse Bias = 2.5V 7 pF Note: 1. Parameter is guaranteed by design and/or component characterization. Capacitance vs. Reverse Bias Insertion Loss (S21) I/O to GND 14.0 5 12.0 0 10.0 -5 8.0 -10 6.0 -15 4.0 -20 2.0 -25 0.0 -30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 100 1000 10000 Frequency (MHz) DC Bias (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/07/19 Capacitance (pF) Attenuation (dB)