TVS Diode Array (SPA Diodes) General Purpose Protection - SP1013 Series RoHS Pb GREEN SP1013 Series 30pF 30kV Bidirectional Discrete TVS 6/10/2020 ESU270-51 SP1020-01WTG Description The SP1013 includes back-to-back Zener diodes which provides protection for electronic equipment that may experience destructive electrostatic discharges (ESD). It measures 0.52 x 0.27mm permitting use of the standard 0201 footprints, but offering a 30% reduction in occupied board space. The SP1013 can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4- 2 international standard (Level 4, 8kV contact discharge) without performance degradation, and the back-to-back configuration provides symmetrical standoff voltage which makes the component appropriate for use when AC signals are present on the data or signal line. Pinout Features ESD, IEC 61000-4-2, Low capacitance of 30pF 0201 Flipchip 30kV contact, 30kV air ( V =0V) R EFT, IEC 61000-4-4, 40A Low leakage current of (5/50ns) 5nA at 1.5V 12 Lightning, IEC 61000- RoHS compliant, Lead- Pin1 Pin2 4-5 2nd edition, 8A free, and Halogen free (t =8/20s) P Note: Drawing not to scale Functional Block Diagram Applications Mobile Phones Digital Cameras Smart Phones MP3/PMP Tablets Portable Navigation 2 1 Devices Wearable Technology Point of Sale Terminals Portable Medical Additional Information Samples Datasheet Resources Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revision: 09/16/20 TVS Diode Array (SPA Diodes) General Purpose Protection - SP1013 Series Absolute Maximum Ratings Symbol Parameter Value Units 1 I Peak Current (t =8/20s) 8.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: 1. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 5.0 V I 1A with 1 pin to GND RWM R Reverse Breakdown Voltage V I =1mA with 1 pin at GND 7.0 V BR T 1 V =1.5V with 1 pin at GND 5 nA R 1 Leakage Current I V =3.3V with 1 pin at GND 10 nA LEAK R 1 100 nA V =5V with 1 pin at GND R I =1A, t =8/20s, Fwd 9 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 9.5 V PP p 2 Dynamic Resistance R TLP t =100ns, 1 Pin to GND 0.2 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 30 35 pF D Note: 1Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns 8/20S Pulse Waveform Capacitance vs. Reverse Bias (1 Pin to GND) 110% 40.0 100% 35.0 90% 80% 30.0 70% 25.0 60% 50% 20.0 40% 15.0 30% 10.0 20% 10% 5.0 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 Time (s) 00.5 11.5 22.5 33.5 44.5 5 Bias Voltage (V) 2018 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revision: 09/16/20 Percent of I PP Capacitance (pF)