TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose ESD Protection - SP1021 Series RoHS Pb GREEN SP1021 Series 6pF 12kV Bidirectional Discrete TVS Description The SP1021 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present. Pinout Features RoHS compliant, Low capacitance of 6pF 0201 Flipchip Halogen-free and Lead- ( V =0V) R free Low leakage current of ESD, IEC 61000-4-2, 0.1A at 5V 12 12kV contact, 15kV air Industrys smallest ESD EFT, IEC 61000-4-4, 40A footprint available (01005) Note: Drawing not to scale (5/50ns) Lightning, IEC 61000- 4-5, 2nd Edition, 2A (t =8/20s) P Functional Block Diagram Applications Mobile Phones Wearable Technology 2 1 Smart Phones Portable Navigation Devices Portable Medical Tablets Additional Information Digital Cameras Samples Datasheet Resources Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2016 Littelfuse, Inc. Specifications are subject to change without notice. 1 6 Revision: 12/13/16 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose ESD Protection - SP1021 Series Absolute Maximum Ratings Symbol Parameter Value Units 1 I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: 1. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 6.0 V RWM 1 V =3.3V with 1 pin at GND 10 nA R Leakage Current I LEAK V =5V with 1 pin at GND 0.1 0.5 A R I =1A, t =8/20s, Fwd 10.0 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 11.2 V PP p TLP, t =100ns, I/O to GND, P Dynamic Resistance R 0.55 DYN 8/20s Dynamic Resistance IEC 61000-4-2 (Contact Discharge) 12 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 kV 1 Diode Capacitance C Reverse Bias=0V 6 pF D Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Pulse Waveform Capacitance vs. Reverse Bias 8 110% 100% 7 90% 6 80% 5 70% 60% 4 50% 3 40% 30% 2 20% 1 10% 0 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 00.5 11.5 22.5 33.5 44.5 5 Time (s) Bias Voltage (V) 2016 Littelfuse, Inc. Specifications are subject to change without notice. 2 7 Revision: 12/13/16 Percent of I PP Capacitance (pF)