TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1027 RoHS Pb GREEN SP1027 6.5pF 14kV Bidirectional Discrete TVS 6/10/2020 ESU270-51 SP1026-01UTG Description The SP1027 bidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1027 TVS can safely absorb repetitive ESD strikes of 14 kV (contact discharge as defined in IEC 61000-4-2) and 25 kV (air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, each TVS can safely dissipate a 2A 8/20 surge event as defined in IEC 61000-4-5 2nd Edition. The back-to- back configuration provides symmetrical ESD protection. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 0201 Flipchip 14kV contact, 25kV air 0.02A (TYP) at 5V EFT, IEC 61000-4-4, 40A Space efficient 0201 12 (5/50ns) Halogen free, Lead free Lightning, 2A (8/20 as and RoHS compliant defined in IEC 61000-4-5 Moisture Sensitivity Level nd 2 edition) (MSL -1) Low capacitance of 6.5pF (TYP V =0V) R Functional Block Diagram Applications Mobile Phones MP3 Smart Phones Portable Navigation Components Camcorders Tablets 2 1 Portable Medical Point of Sale Terminals Digital Cameras Application Example Keypads I/O Controller P1 P2 P3 IC P4 SP1027-01YTG (x4) GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 09/16/20 TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1027 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A - - 5.0 V RWM R Breakdown Voltage V I =1mA 6.0 7.9 - V BR R Reverse Leakage Current I V =5V - 0.02 0.5 A LEAK R I =1A, t =8/20s, Fwd - 10.5 13.0 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd - 11.6 14.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.33 - DYN P IEC 61000-4-2 (Contact Discharge) 10 14 - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 20 25 - kV 1 Diode Capacitance C Reverse Bias=0V, f= 1 MHz - 6.5 10.0 pF IO-IO Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias 8/20s Pulse Waveform 8.0 110% 100% 90% 6.0 80% 70% 60% 4.0 50% 40% 2.0 30% 20% 10% 0.0 012345 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Bias Voltage (V) Time (s) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 09/16/20 Capacitance (pF) Percent of I PP