TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1044 Series RoHS Pb GREEN SP1044 Series 30pF 30kV Unidirectional Discrete TVS 6/10/2020 ESU270-51 SP1020-01WTG Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 3A of 8/20s surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages Pinout Features ESD, IEC 61000-4-2, Low capacitance of 30pF 30kV contact, 30kV air ( V =0V) R EFT, IEC 61000-4-4, 40A Low leakage current of 12 (5/50ns) 0.1A at 5V Lightning, IEC 61000- Industries smallest ESD 4-5,2nd edition, 3A footprint available (01005) Note: Drawing not to scale (t =8/20s) P Halogen free, Lead free and RoHS compliant Functional Block Diagram Applications Mobile Phones Wearable Technology Smart Phones Portable Navigation 2 1 Components Camcorders Tablets Portable Medical Point of Sale Terminals Digital Cameras Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/14/20 TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1044 Series Absolute Maximum Ratings Symbol Parameter Value Units 1 I Peak Current (t =8/20s) 3.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR 1. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V - - - 6.0 V RWM Leakage Current I V =5V with 1 pin at GND - 0.1 0.5 A LEAK R I =1A, t =8/20s, Fwd - 8.3 - V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd - 9.3 - V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.18 - DYN P IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V - 30 35 pF D Notes: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 50.0 100% 45.0 90% 40.0 80% 35.0 70% 30.0 60% 25.0 50% 20.0 40% 15.0 30% 10.0 20% 5.0 10% 0% 0.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 012345 Time (s) Bias Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/14/20 Percent of I PP Capacitance (pF)