TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1054 RoHS Pb GREEN SP1054 25pF 30kV 01005 DFN Plastic Unidirectional Discrete TVS 6/10/2020 ESU270-51 SP1020-01WTG Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely withstand 2.5A surge (8/20 waveshape as defined nd in IEC 61000-4-5 2 edition) at a very low clamping voltage. Pinout Features ESD, IEC 61000-4-2, Unidirectional solutions 30kV contact, 30kV air presents half the dynamic resistance of EFT, IEC 61000-4-4, 40A a bidirectional device 21 (5/50ns) protects fasten and better Lightning, 2.5A (8/20 as Industrys smallest ESD defined in IEC 61000-4-5 Note: Drawing not to scale nd footprint available (01005 2 edition) DFN plastic) Low capacitance of 25.5 Moisture Sensitivity pF ( V =0V) R Level(MSL -1) Low leakage current of Halogen free, lead free 0.02A (TYP) at 5V and RoHS compliant AEC-Q101 qualified Applications Functional Block Diagram Mobile Phones Portable Navigation Components Smart Phones Tablets Camcorders 1 2 Point of Sale Terminals Portable Medical Identification Modules Digital Cameras Wearable Technology Application Example I/O porI/O portt ControControllellerr B1B1 B2B2 B3B3 B4B4 (4) SP1054 SignalSignal GrGrounoundd Life Support Note: ShieldShield Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/17/20 Outside World TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1054 Absolute Maximum Ratings Symbol Parameter Value Units 1 I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: 1. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A - - 6.0 V RWM R Breakdown Voltage V I =1mA 6.5 7.2 - V BR R Leakage Current I V =5V with 1 pin at GND - 0.02 0.5 A LEAK R I =1A, t =8/20s, Fwd - 8.5 11 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd - 9.5 13 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.21 - DYN P IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V - 26 - pF D Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Clamping voltage vs. I for 8/20s Waveshape Capacitance vs. Bias PP 12 30.0 10 25.0 8 20.0 6 15.0 4 10.0 2 5.0 0.0 0 11.5 22.5 012345 Bias Voltage (V) Peak Pulse Current-I (A) PP 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/17/20 Clamp Voltage (V ) C Capacitance (pF)