Driver IC Driver IC Driver IC Driver IC TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1064 Series RoHS Pb GREEN SP1064 Series 8.5pF, 15 kV Diode Array Description The SP1064 is an avalanche breakdown diode fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high speed signal pins. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 6 7 8 9 10 15kV contact, 20kV air 0.05A (TYP) at 60V EFT, IEC 61000-4-4, 40A Small form factor DFN( (5/50ns) JEDEC MO-229) package saves board space Lightning, 2A (8/20s as defined in IEC 61000-4-5, Lead free and RoHS 2nd Edition) compliant 5 4 3 2 1 Low capacitance of 8.5pF AEC-Q101 qualified (TYP) per I/O Functional Block Diagram Applications LCD/PDP TVs Set Top Boxes Pin 1,10 Pin 2,9Pin 4,7Pin 5,6 DVD Players Mobile Phones Desktops Notebooks MP3/PMP Digital Cameras Application Example Control Source TFT-LCD Board Board Panel FPC PMIC Pin 3,8 TFT Array SP1064-04UTG x (2) Substrate Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: JC.11/03/20 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1064 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 60 V RWM R Reverse Leakage Current I V =60V, Any I/O to GND 0.05 A LEAK R I =1A, t =8/20s, Fwd 81 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 95 V PP p 3 Dynamic Resistance R TLP, t =100ns, I/O to GND 4 DYN P IEC 61000-4-2 (Contact) 15 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 20 kV 1, 2 Line Capacitance C Reverse Bias=0V f=1MHz 8.5 pF L Note 1: Parameter is guaranteed by design and/or component characterization. Note 2: Test equipment accuracy 50fF. Note 3: Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 10.0 100% 9.0 90% 8.0 80% 7.0 70% 6.0 60% 5.0 50% 4.0 40% 3.0 30% 20% 2.0 10% 1.0 0% 0.0 0.05.0 10.015.020.025.030.0 05 10 15 20 25 30 35 40 45 50 55 60 Time (s) Bias Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: JC.11/03/20 Percent of I PP Capacitance (pF)