TVS Diode Arrays (SPA Diodes) Datasheet SP1064E 14.0pF, 25kV Diode Array, General Purpose ESD Protection RoHS Pb GREEN Description The SP1064E is an avalanche breakdown diode fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high speed signal pins. Features ESD, IEC 61000-4-2, 25kV Small form factor DFN( Note: This package image is for example and reference only. for detail package drawing, please refer to the package section in this datasheet. contact, 30kV air JEDEC MO-229) package saves board space EFT, IEC 61000-4-4, 40A Pinout (5/50ns) Halogen free, Lead free and 6 7 8 9 10 RoHS compliant Lightning, 3.5A (8/20s as defined in IEC 61000-4-5,2nd AEC-Q101 qualified Edition) Moisture Sensitivity Low capacitance of 14.0pF Level(MSL -1) (TYP) per I/O Low leakage current of 5 4 3 2 1 *Pins 6, 7, 9, 10 are not internally connected 0.05A (TYP) at 60V but should be connected to the trace. Applications Functional Block Diagram LCD/PDP TVs Mobile Phones DVD Players Notebooks Pin 1Pin 2 P4in P5in Desktops Digital Cameras MP3/PMP Set Top Boxes Pin 3,8 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/16/21 TVS Diode Arrays (SPA Diodes) Datasheet SP1064E 14.0pF, 25kV Diode Array, General Purpose ESD Protection Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 3.5 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =2A 60 V RWM R Breakdown Voltage V I =1mA 62 68 73 V BR R Reverse Leakage Current I V =60V, Any I/O to GND 0.05 A LEAK R I =1A, t =8/20s 81 PP p 1 Clamp Voltage V V C I =3.5A, t =8/20s 102 PP p 3 Dynamic Resistance R TLP, t =100ns 2.6 DYN P IEC 61000-4-2 (Contact Discharge) 25 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1, 2 Line Capacitance C Reverse Bias=0V, f=1MHz 14.0 pF L Note 1: Parameter is guaranteed by design and/or component characterization. Note 2: Test equipment accuracy 50fF. Note 3: Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Transmission Line Pulsing (TLP) Plot 24 110% 22 20 100% 18 16 90% 14 12 80% 10 8 70% 6 4 2 60% 0 -2 50% -4 -6 40% -8 -10 30% -12 -14 20% -16 -18 10% -20 -22 0% -24 0.0 5.0 10.0 15.0 20.0 25.0 30.0 -150 -120 -90-60 -300 30 60 90 120150 TLP Voltage (V) Time (s) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/16/21 Percent of I PP TLP TLP Current (ACurrent (A))