TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SP1103C Series RoHS Pb GREEN SP1103C 80A Discrete Bidirectional TVS Diode Description The SP1103C includes TVS diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 80A of 8/20ms surge current (IEC 61000-4-5, 2nd edition) with very low clamping voltages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low clamping voltage 30kV contact, 30kV air Low leakage current EFT, IEC 61000-4-4, 40A PIN 1 AEC-Q101 qualified (5/50ns) Moisture Sensitivity Lightning, IEC 61000- Level(MSL -1) 4-5 2nd edition, 80A Halogen free, Lead free (t =8/20s) P and RoHS compliant Applications Switches / Buttons Notebooks / Desktops / Servers Test Equipment / PIN 2 Instrumentation Computer Peripherals Point-of-Sale Terminals Automotive Electronics Medical Equipment Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/13/20 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SP1103C Series Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 720 W pk p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. SP1103C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A - - 3.3 V RWM R Breakdown Voltage V I =1mA 3.4 3.8 5.0 V BR R Leakage Current I V =3.3V - - 1.0 A LEAK R I =40A, t =8/20s, Fwd - 6 - V PP p 1 Clamp Voltage V C I =80A, t =8/20s, Fwd - 9 - V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.01 - DYN P Peak Pulse Current I t =8/20s - - 80 A pp p IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz - 130 - pF D Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns I-V Curve Characteristics V Stand-off Voltage -- Maximum voltage that can be applied to the R I TVS without operation Bi-directional Ipp V Breakdown Voltage -- Maximum voltage that ofl ws though the BR (I ) TVS at a specified test current T V Clamping Voltage -- Peak voltage measured across the TVS at a C specified Ippm (peak impulse current) IT IR VBR Vc VR I Reverse Leakage Current -- Current measured at V R R V IR VR VBR Vc IT Ipp 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/13/20