TVS Diode Array (SPA Diodes) General Purpose Surge Protection - SP11xx Series RoHS Pb GREEN SP11xx Series Discrete Unidirectional TVS Diode Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SP1105S) of 8/20s surge nd current (IEC 61000-4-5 2 edition) with very low clamping voltages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low clamping voltage 30kV contact, 30kV air Pin 1 Low leakage current EFT, IEC 61000-4-4, 40A Moisture Sensitivity (5/50ns) Level(MSL -1) Lightning, IEC 61000- Lead free and RoHS nd 4-5 2 edition, 80A compliant (t =8/20s, SP1105S) P AEC-Q101 qualified Applications Switches / Buttons Notebooks / Desktops / Pin 2 Servers Test Equipment / Instrumentation Computer Peripherals Point-of-Sale Terminals Automotive Electronics Medical Equipment Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/24/20 TVS Diode Array (SPA Diodes) General Purpose Surge Protection - SP11xx Series Absolute Maximum Ratings Symbol Parameter Value Units T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. SP1105 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A - - 5.0 V RWM R Reverse Voltage Drop V I =1mA 6.0 - - V R R Leakage Current I V =5V - - 1.0 A LEAK R I =1A, t =8/20s, Fwd - 7.3 - V PP p 1 Clamp Voltage V C I =70A, t =8/20s, Fwd - 10.9 - V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.05 - DYN P Peak Pulse Current I t =8/20s - - 70 A pp p IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz - 630 - pF D SP1105S Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A - - 5.0 V RWM R Reverse Voltage Drop V I =1mA 6.0 - 7.5 V R R Leakage Current I V =5V - - 1.0 A LEAK R I =40A, t =8/20s, Fwd - 8.3 - V PP p 1 Clamp Voltage V C I =80A, t =8/20s, Fwd - 9.2 - V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.05 - DYN P Peak Pulse Current I t =8/20s - - 80 A pp p IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz - 630 - pF D SP1112 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A - - 12.0 V RWM R Reverse Voltage Drop V I =1mA 13.3 - - V R R Leakage Current I V =12V - - 1.0 A LEAK R I =1A, t =8/20s, Fwd - 15.2 - V PP p 1 Clamp Voltage V C I =40A, t =8/20s, Fwd - 26.5 - V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND - 0.05 - DYN P Peak Pulse Current I t =8/20s - - 40.0 A pp p IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz - 230 - pF D-GND 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/24/20