TVS Diode Arrays Datasheet SP1212 12A Discrete Unidirectional TVS Diode 9/30/2021 ESU270-62 SP1250-01ETG Description The SP1212 unidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1212 TVS can safely absorb repetitive ESD strikes of 30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, each TVS can safely dissipate a 12A 8/20 surge event as defined in IEC 61000-4-5 2nd Edition. Features & Benefits ESD, IEC 61000-4-2, 30kV AEC-Q101 qualified contact, 30kV air Lead free and RoHS compliant EFT, IEC 61000-4-4, 40A (5/50ns) Moisture Sensitivity Additional Information Lightning, 12A (8/20s as Level(MSL -1) defined in IEC 61000-4-5 2nd edition) Applications Resources Accessories Samples Switches / Buttons Notebooks / Desktops / Servers Test Equipment / Instrumentation Computer Peripherals Point-of-Sale Terminals Battery Pinout and Functional Block Diagram Medical Equipment Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 06/10/21TVS Diode Arrays Datasheet SP1212 12A Discrete Unidirectional TVS Diode Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 250 W pk p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5.0 V RWM R Breakdown Voltage V I =1mA 7.0 V BR R Reverse Leakage Current I V =5V 0.1 0.5 A LEAK R I =1A, t =8/20s 7.5 V PP p 1 Clamp Voltage V C I =12A, t =8/20s 9.7 V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.33 DYN P Peak Pulse Current I t =8/20s 12 A pp p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 290 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Clamping Voltage vs IPP for 8/20s waveshape 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 06/10/21