TVS Diode Arrays (SPA Diodes) Surge Protection - SP1224 RoHS Pb GREEN SP1224 (100A) for USB V BUS Description This SP1224 TVS diode has a lightning surge rating of nd 100A (8/20 as defined in IEC 61000-4-5 2 edition) and is intended for USB V protection. It provides superior BUS protection for current intensive applications such as the USB fast charging circuits. The SP1224 TVS is offered in a space saving 2.0 x 1.8 mm DFN package with a typical height of 0.55 mm. This small form factor makes this component ideal for smart phones, tablets, and other portable electronics that are footprint challenged. Pinout Features ESD, IEC 61000-4-2, High current handling 5 6 30kV contact, 30kV air capability for fast charging applications EFT, IEC 61000-4-4, 80A (t =5/50ns) Halogen free, lead free P and RoHS compliant Lightning, 100A (8/20 as defined in IEC 61000-4-5 Moisture Sensitivity nd 2 edition) Level(MSL -1) Protection for V BUS operating up to 24V 4 3 2 1 Bottom View Functional Block Diagram Applications V protection for fast charging USB circuits BUS Pin 1 (V ) BUS Pin 5, 6 (GND) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/20 GND GND TVS Diode Arrays (SPA Diodes) Surge Protection - SP1224 Absolute Maximum Ratings Symbol Parameter Value Units I (Pin 1) Peak Current (t =8/20s) 100 A PP p P (Pin1) Peak Pulse Power (t =8/20s) 3700 W PK p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses at or above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also due to variations in test equipment stresses shown above are averages. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A, Pin 1 to GND 22 V RWM R Breakdown Voltage V I =1mA, Pin 1 to GND 24 27 V BR R Reverse Leakage Current I V =22V, Pin 1 to GND 0.02 0.5 A LEAK R Forward Voltage V I =10mA, GND to Pin 1 0.6 0.7 1.0 V F F 1 Clamp Voltage V I =100A, t =8/20s, Fwd 35 37 V C PP p 2 Dynamic Resistance R TLP, t =100ns, Pin1 to GND 0.15 DYN P IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 770 850 pF I/O-GND Notes: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias (Pin1 to GND) Clamping Voltage vs. Peak Pulse Current (Pin1 to GND) 900 40.0 800 35.0 700 30.0 600 25.0 500 20.0 400 15.0 300 10.0 200 5.0 100 0 0.0 10 20 30 40 50 60 70 80 90 100 0246 810121416182022 Bias Voltage (V) Peak Pulse Current-I (A) PP 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/20 Capacitance (pF) Clamp Voltage (V ) C SP3012