TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose ESD Protection - SP1103C SeriesSP1233 RoHS Pb GREEN SP1233 20A Discrete Bidirectional TVS Diode Description The SP1233 includes TVS diodes fabricated in a proprietary silicon avalanche technology to protect each I/O pin and provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC61000-4-2) without performance degradation. Additionally, the SP1233 offers up to 20A 8/20 surge rating with low clamping voltages Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low clamping voltage PIN 1 30kV contact, 30kV air Low leakage current EFT, IEC 61000-4-4, 40A AEC-Q101 qualified (5/50ns) Moisture Sensitivity Lightning, 20A (8/20 as Level(MSL -1) defined in IEC 61000-4-5 Halogen free, lead free nd 2 edition) and RoHS compliant Applications Switches / Buttons Notebooks / Desktops / PIN 2 Servers Test Equipment / Instrumentation Computer Peripherals Point-of-Sale Terminals Medical Equipment Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/30/18 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose ESD Protection - SP1103C Series SP1233 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 20 A pp p P Peak Pulse Power (tp=8/20s) 180 W pk T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 3.3 V RWM R Breakdown Voltage V I =1mA 4.2 V BR R Leakage Current I V =3.3V 0.02 0.5 A LEAK R I =10A, t =8/20s, Fwd 6.1 V PP p 1 Clamp Voltage V C I =20A, t =8/20s, Fwd 8.5 V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.07 DYN P Peak Pulse Current I t =8/20s 20 A pp p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 35 pF D Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform 110% 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/30/18 Percent of I PP