TVS Diode Arrays (SPA Diodes) General Purpose Surge Protection - SP1250 RoHS Pb GREEN SP1250 50A Discrete Unidirectional TVS Diode Description The SP1250 unidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1250 TVS can safely absorb repetitive ESD strikes of 30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, each TVS can safely dissipate a 50A 8/20s nd surge event as defined in IEC 61000-4-5 2 edition. Note: This package image is for example and reference only. for detail package drawing, please refer to the package section in this datasheet. Features Pinout ESD, IEC 61000-4-2, Halogen free, lead free 30kV contact, 30kV air and RoHS compliant SOD882 EFT, IEC 61000-4-4, 40A Moisture Sensitivity Level (5/50ns) (MSL -1) Lightning, 50A (8/20s as 12 defined in IEC 61000-4-5 nd 2 edition) Low leakage current of 0.02A (TYP) at 5V Functional Block Diagram Applications VBUS Protection Medical Equipment Portable Battery Notebooks / Desktops / Servers Switches / Buttons 2 1 Computer Peripherals Test Equipment / Instrumentation Point-of-Sale Terminals Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.11/24/20 TVS Diode Arrays (SPA Diodes) General Purpose Surge Protection - SP1250 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 50 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A - - 5 V RWM R Breakdown Voltage V I =1mA 5.1 5.5 - V BR R Reverse Leakage Current I V =5V - 0.02 0.1 A LEAK R 1 Clamp Voltage V I =50A, t =8/20s - 8.7 10 V C PP p 2 Dynamic Resistance R TLP, t =100ns - 0.05 - DYN P IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz - 120 - pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping voltage vs. I for 8/20s waveshape PP 10.0 120.0 9.0 8.0 100.0 7.0 80.0 6.0 5.0 60.0 4.0 3.0 40.0 2.0 20.0 1.0 0.0 0.0 15 20 25 30 35 40 45 50 01234 5 Peak Pulse Current - I (A) PP Bias Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.11/24/20 Capacitance (pF) Clamp Voltage (V ) C