TVS Diode Array Datasheet SP1255 Series 160A for V BUS 6/25/2021 ESU270-54 RoHS Pb GREEN N/A Description The SP1255 integrates a 13.5V TVS diode to provide lightning surge protection for the USB VBUS pin up to 160A (tP=8/20s) per the IEC 61000- 4-5 standard. The SP1255 provides superior protection for current intensive applications such as fast charging peripherals. The SP1255 comes in a space saving 2.0x1.8mm DFN package with a typical height of 0.55mm making it an ideal solution for smart phones, tablets, and other portable electronics. Features & Benefits ESD, IEC 61000-4-2, 30kV Benchmark setting protection contact, 30kV air High current handling EFT, IEC 61000-4-4, 80A capability for fast charging (tP=5/50ns) applications Additional Information Surge, IEC 61000-4-5 2nd Halogen free, Lead free and edition, 160A (tP=8/20s) RoHS compliant Protection for VBUS operating AEC-Q101 qualified up to 13.5V Applications Resources Accessories Samples Protection for the VBUS circuit on USB2.0 Fast Charging Functional Block Diagram Pinout Pin 1 Pin 5,6 (GND) (V ) BUS Bottom View Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 04/13/21 GND GNDTVS Diode Array Datasheet SP1255 Series 160A for V BUS Absolute Maximum Ratings Symbol Parameter Value Units I (Pin 1) Peak Current (t =8/20s) 160 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses at or above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also due to variations in test equipment stresses shown above are averages. Electrical Characteristics (TOP=25C) Parameter Symbol Test Conditions Min Typ Max Units USB V (Pin 1) BUS Reverse Standoff Voltage V Pin 1 to GND 13.5 V RWM Reverse Breakdown Voltage V I =1mA, Pin 1 to GND 14.5 16.5 V BR T Reverse Leakage Current I V =13.5V, Pin 1 to GND 0.05 1 A LEAK R Forward Voltage V I =10mA, GND to Pin 1 0.6 0.7 1.0 V F F I =30A, t =8/20s, Fwd 16.5 18 V PP p I =100A, t =8/20s, Fwd 19.5 25 V PP p 1 Clamp Voltage V C I =135A, t =8/20s, Fwd 25.5 V PP p I =160A, t =8/20s, Fwd 28.0 V PP p IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 1300 2500 pF D Note: 1 Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias (Pin1 to GND) Clamping Voltage vs. Peak Pulse Current (Pin1 to GND) 28.0 1100 1000 24.0 900 20.0 800 700 16.0 600 12.0 500 400 8.0 300 200 4.0 100 0.0 0 0.0 20.0 40.0 60.0 80.0 100.0 0 123456789 10 11 12 Bias Voltage (V) Peak Pulse Current -I (A) PP Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin1 to GND) 100 10 1 0.1 0.11 10 1001000 Pulse Duration tp(s) 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 04/13/21 Peak Pulse Power -P (kW) pp Capacitance (pF) ) Clamp Voltage (V C SP3012